Measurement and Modeling of Silicon Heterostructure Devices - Rilegato

Cressler, John D.

Rilegato

ISBN 10: 1420066927 ISBN 13: 9781420066920

Casa editrice: CRC Press, 2008

Riassunto

When you see a nicely presented set of data, the natural response is: “How did they do that; what tricks did they use; and how can I do that for myself?” Alas, usually, you must simply keep wondering, since such tricks-of- the-trade are usually held close to the vest and rarely divulged. Shamefully ignored in the technical literature, measurement and modeling of high-speed semiconductor devices is a fine art. Robust measuring and modeling at the levels of performance found in modern SiGe devices requires extreme dexterity in the laboratory to obtain reliable data, and then a valid model to fit that data.

Drawn from the comprehensive and well-reviewed Silicon Heterostructure Handbook, this volume focuses on measurement and modeling of high-speed silicon heterostructure devices. The chapter authors provide experience-based tricks-of-the-trade and the subtle nuances of measuring and modeling advanced devices, making this an important reference for the semiconductor industry. It includes easy-to-reference appendices covering topics such as the properties of silicon and germanium, the generalized Moll-Ross relations, the integral charge-control model, and sample SiGe HBT compact model parameters.

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Informazioni sull?autore

John D. Cressler

Dettagli dell?edizione

• Editore: CRC Press
• Data di pubblicazione: 2008
• Lingua: Inglese
• ISBN 10: 1420066927
• ISBN 13: 9781420066920
• Rilegatura: Copertina rigida
• Numero edizione: 1
• Numero di pagine: 198
• Contatto del produttore: non disponibile