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Diamond Electronics and Bioelectronics ― Fundamentals to Applications IV: Volume 1282: Symposium Held November 29-december 3, Boston, Masachusetts, U. S. A. - Rilegato

 
9781605112596: Diamond Electronics and Bioelectronics ― Fundamentals to Applications IV: Volume 1282: Symposium Held November 29-december 3, Boston, Masachusetts, U. S. A.

Sinossi

Symposium A, 'Diamond Electronics and Bioelectronics - Fundamentals to Applications IV' resulted in this volume covering the rapid advances in these evolving fields.

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Symposium A, 'Diamond Electronics and Bioelectronics - Fundamentals to Applications IV', was held November 29–December 3 at the 2010 MRS Fall Meeting and resulted in this volume covering the rapid advances in these evolving fields.

Contenuti

Part I. Diamond Growth: 1. Routes towards large area, low pressure nanodiamond growth via pulsed microwave linear antenna plasma chemistry Milos Nesladek; 2. Simulations of CVD diamond film growth: 2D models for the identities and concentrations of gas-phase species adsorbing on the surface Paul May; 3. Phase transition and self-assembly of lower diamondoids and derivatives G. Ali Mansoori; 4. Homoepitaxial growth of high quality thick diamond film with microwave plasma CVD technique Hong-Xing Wang; 5. Effects of initial growth and seeding conditions on boron doped hot filament diamond films Jerry Zimmer; Part II. Properties of Diamond: 6. Carrier lifetime, diffusion length and mobility in (100) CVD diamond samples pre-treated in an O2/H2-plasma Wim Deferme; 7. Time-of-flight characterization of single-crystalline CVD diamond with different surface passivation layers Kiran Kumar Kovi; 8. Thermal effects on the raman spectra of nanodiamonds Marc Chaigneau; 9. Local stress-strain structure in CVD diamond observed by raman peak-shift mapping Yukako Kato; 10. Determination of boron concentration in doped diamond films Shannon Demlow; 11. CVD diamond dislocations observed by x-ray topography, birefringence image and cathodoluminescence mapping Yukako Kato; 12. Thin nano- and microcrystalline CVD diamond films for micro-channel cooling: thermal and elastic properties Ken Haenen; 13. Influence of methane concentration on the electric transport properties in heavily boron-doped nanocrystalline CVD diamond films Stoffel Janssens; Part III. Single Defect Properties: 14. Group theoretical analysis of nitrogen-vacancy center's energy levels and selection rules Jeronimo Maze; 15. On the mechanism of charge transfer between neutral and negatively charged nitrogen-vacancy color centers in diamond Vladimira Petrakova; Part IV. Diamond Technology and Applications: 16. Focused ion beam milling of crystalline diamonds Deok-Yang Kim; 17. Diamond nanopit arrays fabricated by room-temperature nanoimprinting using diamond molds Shuji Kiyohara; 18. Optimization of a boron doped nanocrystalline diamond temperature regulator for sensing applications Ken Haenen; 19. Fabrication and characterization of single-crystal CVD diamond current amplifier Joan Yater; 20. 50nm gate-length hydrogen terminated diamond field effect transistors - characterization and inspection of operation David Moran; 21. Glucose oxidase-functionalized nanodiamond films for biosensor application Pedro Villalba; 22. Electrical conducting diamond thin-films: an alternative counter electrode material for dye sensitized solar cells R. Vispute; Part V. Surface Properties: 23. The Li-adsorbed C(100)-(1x1):O diamond surface Kane O'Donnell; 24. Lithium monolayers on single crystal C(100) oxygen-terminated diamond Tomas Martin; 25. Investigations of microwave and THz radiation losses in CVD diamond and chemically modified diamond Theo Scherer; Part VI. Carbon Nitrides: 26. Composition, bonding state, and electrical properties of carbon nitride films formed by electrochemical deposition technique Hideo Kiyota.

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CHRISTOPH E. NEBEL, FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS, GERMANYPHILIPPE BERGONZO, CEA-LIST, CENTRE D'ETUDES DE SACLAY, FRANCEJAMES E. BUTLER, UNITED STATES NAVAL RESEARCH LABORATORYMILOS NESLADEK, HASSELT UNIVERSITY & IMEC VZW, BELGIUMANDREW T. S. WEE, NATIONAL UNIVERSITY OF SINGAPORE DIV CLASS="CONTRIBUTORSPEOPLE">DIV CLASS="CONTRIBUTORSPEOPLEHIDDEN">MILOS NESLADEK, PAUL MAY, G. ALI MANSOORI, HONG-XING WANG, JERRY ZIMMER, WIM DEFERME, KIRAN KUMAR KOVI, MARC CHAIGNEAU, YUKAKO K
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