Oxide Nanoelectronics: Volume 1292 - Rilegato

Rilegato

ISBN 10: 1605112690 ISBN 13: 9781605112695

Casa editrice: Cambridge University Press, 2011

Riassunto

Symposium K, 'Oxide Nanoelectronics', brought together researchers to lay a materials-based foundation to pave the way for industrial use of high-performance nanoelectronic systems.

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Descrizione del libro

Symposium K, 'Oxide Nanoelectronics', was held November 29–December 3 at the 2010 MRS Fall Meeting in Boston, Massachusetts. The field of oxide nanoelectronics has grown in the last decade. The symposium that this volume is based on brought together researchers working in this new field to lay a materials-based foundation that can pave the way for major industrial use of these high-performance nanoelectronic systems.

Contenuti

Part I. Ferroelectric Oxides: 1. Structural and ferroelectric properties of large c/a phase bismuth ferrite thin films prepared by ion beam sputtering Seiji Nakashima; 2. Dielectric properties of BST/(Y2O3)x(ZrO2)1-x/BST trilayer films Santosh Sahoo; 3. Coupling of defect fields to domains and phase transition characteristics of ferroelectric thin films with charged defects Ibrahim Misirlioglu; 4. Polarization dependence and relaxation of the current in polycrystalline ferroelectric Pb(ZrTi)O3 film Liubov Delimova; 5. Template-assisted fabrication of double-shelled nanotubes composed of inner shell Pb(Zr0.52Ti0.48)O3 and outer shell TiO2 by sol-gel process with spin-coating technique Sang Don Bu; 6. Magnetization effects in bulk YFeO3 and their dependency on electric field strength and temperature as a basis for thin film investigation of multiferroic technology Adam Hinckley; Part II. Electron Transport through Oxide Junctions: 7. Electronic states and magnetic coupling in Fe/Fe3O4 junctions Junichiro Inoue; 8. Tunneling currents in nanoscale high-K MOS structures Andres Vercik; 9. Fabrication of semi-transparent resistive random access memory and its characteristics of nonvolatile resistive switching Jung Won Seo; Part III. Vanadium Dioxide: 10. Epitaxial growth of V2O3 on Al2O3 by reactive MBE Leander Dillemans; 11. Lattice-symmetry-driven phase competition in vanadium dioxide Alexander Tselev; 12. Twin-domain epitaxial growth and metal-insulator transition of VO2 thin film on c-plane sapphire Zhaoyang Fan; Part IV. Binary Oxides: 13. Structural, optical and magnetic properties of Co-doped ZnO nanopowders Segundo Jáuregui Rosas; 14. Preparation of the CrO2 thin films using a Cr8O21 precursor Yuji Muraoka; 15. Dispersed nanoelectrodes for high performance gas sensors Antonio Tricoli; 16. Template-free, low temperature synthesis of binary and ternary metal oxide nanostructures Sanjaya Brahma; 17. In-situ solution processed room temperature ferromagnetic MgO thin films printed by inkjet technique Yan Wu; 18. Effects of argon to oxygen ratio and post annealing on R.F. sputtered SnO2 thin film for ethylene gas detection Dong-Joo Kim; 19. The effect of oxygen partial pressure during deposition in the magnetic properties of ZnO thin film Anis Biswas; Part V. Growth of Ternary Oxides: 20. Growth of CaFeOX/LaFeO3 superlattice on SrTiO3(100) substrates Nobuyuki Iwata; 21. Preparation and characterization of the single-layered cobaltate La2-xCaxCoO4 Dirk Fuchs; 22. Crystalline orientation of PbTiO3 nanorods grown by MOCVD using ZnO nanorods as a template Hironori Fujisawa; 23. PEG-assisted hydrothermal synthesis and photocatalytic activity of Bi2Fe4O9 crystallites Dengrong Cai; 24. Noncontact electrical diagnostics of barium strontium titanate (BST) thin films Andrew Hoff.

Dettagli dell'edizione

• Editore: Cambridge University Press
• Data di pubblicazione: 2011
• Lingua: Inglese
• ISBN 10: 1605112690
• ISBN 13: 9781605112695
• Rilegatura: Copertina rigida
• Numero di pagine: 170
• Redattore: Hwang Harold, Levy Jeremy, Makysymovych Peter, Medeiros-Ribeiro Gilberto, Waser Rainer
• Contatto del produttore: non disponibile
• Persona responsabile: Avery; https://www.avery.fr/; ; chemin des peupliers 27; Dardilly; Francia