Modeling Bipolar Power Semiconductor Devices - Brossura

Gachovska, Tanya K.; Hudgins, Jerry L.; Santi, Enrico; Bryant, Angus; Palmer, Patrick R.

Brossura

ISBN 10: 162705121X ISBN 13: 9781627051217

Casa editrice: Morgan & Claypool Publishers, 2013

Riassunto

This book presents physics-based models of bipolar power semiconductor devices and their implementation in MATLAB and Simulink. The devices are subdivided into different regions, and the operation in each region, along with the interactions at the interfaces which are analyzed using basic semiconductor physics equations that govern their behavior. The Fourier series solution is used to solve the ambipolar diffusion equation in the lightly doped drift region of the devices. In addition to the external electrical characteristics, internal physical and electrical information, such as the junction voltages and the carrier distribution in different regions of the device, can be obtained using the models. Table of Contents: Introduction to Power Semiconductor Device Modeling / Physics of Power Semiconductor Devices / Modeling of a Power Diode and IGBT / IGBT Under an Inductive Load-Switching Condition in Simulink / Parameter Extraction

Su questo libro

Product Description

Book by Gachovska Tanya K Hudgins Jerry L Santi Enrico Bry

Dettagli dell'edizione

• Editore: Morgan & Claypool Publishers
• Data di pubblicazione: 2013
• Lingua: Inglese
• ISBN 10: 162705121X
• ISBN 13: 9781627051217
• Rilegatura: Copertina flessibile
• Numero di pagine: 94
• Contatto del produttore: non disponibile
• Persona responsabile: non disponibile