Sinossi
Ever since its invention in the 1980s, the compound semiconductor heterojunction-based high electron mobility transistor (HEMT) has been widely used in radio frequency (RF) applications. This book provides readers with broad coverage on techniques and new trends of HEMT, employing leading compound semiconductors, III-N and III-V materials.The content includes an overview of GaN HEMT device-scaling technologies and experimental research breakthroughs in fabricating various GaN MOSHEMT transistors. Readers are offered an inspiring example of monolithic integration of HEMT with LEDs, too. The authors compile the most relevant aspects of III-V HEMT, including the current status of state-of-art HEMTs, their possibility of replacing the Si CMOS transistor channel, and growth opportunities of III-V materials on an Si substrate.With detailed exploration and explanations, the book is a helpful source suitable for anyone learning about and working on compound semiconductor devices.
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Compound Semiconductor Materials and Devices (Synthesis Lectures on Emerging Engineering Technologies)
Editore:
Morgan & Claypool Publishers, 2016
ISBN 10: 1627058524
ISBN 13: 9781627058520
Antico o usato
Soft cover
Da: Our Kind Of Books, Liphook, Regno Unito
Valutazione del venditore 5 su 5 stelle
Soft cover. Condizione: As New. This book has been in storage since publication and is unread. Hence the description as new . Codice articolo 2305340
Compra usato
EUR 11,74
Spese di spedizione:
EUR 25,25
Da: Regno Unito a: U.S.A.
Quantità: 1 disponibili