Articoli correlati a Epitaxy of Semiconductors: Physics and Fabrication...
Epitaxy of Semiconductors: Physics and Fabrication of Heterostructures - Brossura
Libro 88 di 126: Graduate Texts in Physics
Sinossi
1 Introduction
1.1 Epitaxy
1.2 Issues of Epitaxy
2 Structural Properties of Heterostructures
2.1 Basic Crystal Structures
2.2 Elastic Properties of Heterostructures
2.3 Dislocations
2.4 Defects in Organic Crystals
2.5 Structural Characterization using X‐ray Diffraction
3 Electronic Properties of Heterostructures
3.1 Bulk Properties
3.2 Band Offsets
3.3 Electronic States in Low‐Dimensional Structures
4 Thermodynamics of Epitaxial Layer‐Growth
4.1 Phase Equilibria4.2 Crystalline Growth
5 Atomistic Aspects of Epitaxial Layer‐Growth
5.1 Surface Structure
5.2 Kinetic Process Steps in Layer Growth
5.3 Self‐Organized Nanostructures
6 In situ Growth Monitoring
6.1 Surface Probes6.2 Electron Diffraction Techniques
6.3 Optical Techniques
7 Application of Surfactants
7.1 Surfactant Effect
7.2 Surfactant‐Assisted Epitaxy
8 Doping, Diffusion, and Contacts
8.1 Doping of Semiconductors
8.2 Diffusion
8.3 Metal‐Semiconductor Contact
9 Methods of Epitaxy
9.1 Liquid Phase Epitaxy
9.2 Metallorganic Vapor Phase Epitaxy
9.3 Molecular Beam Epitaxy
10 Special Growth Techniques
10.1 Growth of Buffer Layers
10.2 Atomic Layer Epitaxy and Related Techniques
10.3 Selective‐Area Epitaxy
10.4 Vapor‐Liquid‐Solid Growth
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