Articoli correlati a Hierarchical Device Simulation: The Monte-Carlo Perspective
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This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
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Contenuti
Introduction References Semiclassical Transport Theory The Boltzmann Transport Equation • Balance Equations • The Microscopic Relaxation Time • Fluctuations in the Steady-State • References The Monte-Carlo Method Basic Monte-Carlo Methods • The Monte-Carlo Solver of the Boltzmann Equation • Velocity Autocorrelation Function • Basic Statistics • Convergence Estimation • References Scattering Mechanisms Phonon Scattering • Alloy Scattering • Impurity Scattering • Impact Ionization by Electrons • Surface Roughness Scattering • References Full-Band Structure Basic Properties of the Band Structure of Relaxed Silicon • Basic Properties of the Band Structure of Strained SiGe • k-Space Grid • Calculation of the Density of States • Mass Tensor Evaluation • Particle Motion in Phase-Space • Selection of a Final State in k-Space • References Device Simulation Device Discretization • Band Edges • Poisson Equation • Self-Consistent Device Simulation • Nonlinear Poisson Equation • Nonself-Consistent Device Simulation • Statistical Enhancement • Terminal Current Estimation • Contact Resistance • Normalization of Physical Quantities • References Momentum-Based Transport Models The Hydrodynamic Model • Small-Signal Analysis • Noise Analysis • The Drift-Diffusion Model • Transport and Noise Parameter Simulation • References Stochastic Properties of Monte-Carlo Device Simulations Stochastic Error • In-Advance CPU Time Estimation • References Results N+ NN+ and P+ PP+ Structures • MOSFETs • SiGe HBTs Subject Index
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Hierarchical Device Simulation.
Da: Universitätsbuchhandlung Herta Hold GmbH, Berlin, Germania
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2003th ed. 16 x 23 cm. 270 pages. Hardcover. Versand aus Deutschland / We dispatch from Germany via Air Mail. Einband bestoßen, daher Mängelexemplar gestempelt, sonst sehr guter Zustand. Imperfect copy due to slightly bumped cover, apart from this in very good condition. Stamped. Sprache: Englisch. Codice articolo 6615VB
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Hierarchical Device Simulation
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Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. First monograph on physics-based simulations of novel strained Si and SiGe devicesIn-depth description of the full-band monte-carlo method for SiGeComprehensive description of the momentum-based and monte-carlo models is givenThi. Codice articolo 4487707
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Hierarchical Device Simulation
Print on DemandDa: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
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Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy. 284 pp. Englisch. Codice articolo 9783211013618
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Hierarchical Device Simulation : The Monte-Carlo Perspective
Da: AHA-BUCH GmbH, Einbeck, Germania
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Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - This book summarizes the research of more than a decade. Its early motivation dates back to the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte-Carlo solutions of the Boltzmann transport equation at the NASECODE conferences in Ireland. At that time numerical semiconductor device modeling basically implied the application of the drift-diffusion model. On the one hand, those talks clearly showed the potential of the Monte-Carlo model for an accurate description of many important transport issues that cannot adequately be addressed by the drift-diffusion approximation. On the other hand, they also clearly demonstrated that at that time only very few experts were able to extract useful results from a Monte-Carlo simulator. With this background, Monte-Carlo research activities were started in 1986 at the University of Aachen (RWTH Aachen), Germany. Different to many other Monte-Carlo research groups, the Monte-Carlo research in Aachen took place in an environment of active drift-diffusion and hydrodynamic model development. Codice articolo 9783211013618
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Hierarchical Device Simulation
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Springer Vienna, Springer Vienna Jun 2003, 2003
ISBN 10: 321101361X
ISBN 13: 9783211013618
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
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Buch. Condizione: Neu. Neuware -This book summarizes the research of more than a decade. Its early motivation dates back to the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte-Carlo solutions of the Boltzmann transport equation at the NASECODE conferences in Ireland. At that time numerical semiconductor device modeling basically implied the application of the drift-diffusion model. On the one hand, those talks clearly showed the potential of the Monte-Carlo model for an accurate description of many important transport issues that cannot adequately be addressed by the drift-diffusion approximation. On the other hand, they also clearly demonstrated that at that time only very few experts were able to extract useful results from a Monte-Carlo simulator. With this background, Monte-Carlo research activities were started in 1986 at the University of Aachen (RWTH Aachen), Germany. Different to many other Monte-Carlo research groups, the Monte-Carlo research in Aachen took place in an environment of active drift-diffusion and hydrodynamic model development.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 284 pp. Englisch. Codice articolo 9783211013618
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Condizione: New. pp. 284. Codice articolo 26327621
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Condizione: New. Print on Demand pp. 284 Illus. Codice articolo 7553050
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Hierarchical Device Simulation
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Condizione: New. PRINT ON DEMAND pp. 284. Codice articolo 18327631
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