Analysis and Simulation of Heterostructure Devices - Rilegato
Libro 15 di 17: Computational Microelectronics
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The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.
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Contenuti
List of Acronyms List of Symbols Introduction State-of-the-Art of Materials, Device Modeling, and RF Devices Physical Models RF Parameter Extraction for HEMTs and HBTs Heterojunction Bipolar Transistors High Electron Mobility Transistors Novel Devices Appendix: Benchmark Structures References
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Analysis and Simulation of Heterostructure Devices (Computational Microelectronics)
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Analysis and Simulation of Heterostructure Devices.
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gebundene Ausgabe. Condizione: Gut. 289 Seiten; Das hier angebotene Buch stammt aus einer teilaufgelösten wissenschaftlichen Bibliothek und trägt die entsprechenden Kennzeichnungen (Rückenschild, Instituts-Stempel.); Schnitt und Einband sind etwas staubschmutzig; der Buchzustand ist ansonsten ordentlich und dem Alter entsprechend gut. Text in ENGLISCHER Sprache! Sprache: Englisch Gewicht in Gramm: 700. Codice articolo 1608006
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Analysis and Simulation of Heterostructure Devices (Computational Microelectronics)
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Analysis and Simulation of Heterostructure Devices
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Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices. 324 pp. Englisch. Codice articolo 9783211405376
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Gebunden. Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. First full and comprehensive modeling of relevant compound semiconductorsVerified by precise simulation of real-state-of-the-art devices in over 25 different simulation examplesBridges the gap between theory and applications with a large nu. Codice articolo 4487893
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Buch. Condizione: Neu. Analysis and Simulation of Heterostructure Devices | Rüdiger Quay (u. a.) | Buch | xx | Englisch | 2003 | Springer | EAN 9783211405376 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu Print on Demand. Codice articolo 102505069
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Analysis and Simulation of Heterostructure Devices
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Springer Vienna, Springer Dez 2003, 2003
ISBN 10: 3211405372
ISBN 13: 9783211405376
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Buch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli cations. To cope with explosive development costs and the competition of today's semicon ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 324 pp. Englisch. Codice articolo 9783211405376
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Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli cations. To cope with explosive development costs and the competition of today's semicon ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented. Codice articolo 9783211405376
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