A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs: Adc Using Sputtered Igzo Tfts With Multilayer Dielectric - Brossura

Libro 108 di 209: SpringerBriefs in Electrical and Computer Engineering

Correia, Ana Paula Pinto Pinto

 
9783319271903: A Second-Order ΣΔ ADC Using Sputtered IGZO TFTs: Adc Using Sputtered Igzo Tfts With Multilayer Dielectric

Sinossi

This books discusses the design, electrical simulation and layout of a 2nd-order ?? analog-to-digital converter (ADC), using oxide thin-film transistors (TFTs) technology. The authors provide a unified view of materials science and electronics engineering, in order to guide readers from both fields through key topics. To accomplish this goal, background regarding materials, device physics, characterization techniques, circuit design and layout is given together with a detailed discussion of experimental data. The final simulation results clearly demonstrate the potential of the proposed circuit-level techniques, which enables the implementation of robust and energy efficient ADCs based on oxide TFTs, for moderate resolutions and conversion-rates.

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Informazioni sull?autore

João Goes graduated from IST, Lisbon, in ECE, in 1992. He obtained the M.Sc. & the Ph.D. degrees in ECE, respectively, in 1996 & 2000, from the Tech. Unive. of Lisbon & the ‘Agregado’ degree ('Habilitation' degree) in 2012 from the UNL.

He has been with the DEE of the FCT of UNL, since April 1998 where he is currently an Asso. Pro. &, since July 2012, he has been heading the Dept. From 1998 he has been a Senior Researcher at the CTS at UNINOVA & responsible for the Micro & Nanoelectronics research Unit. In Nov. 2012 he became the Director of CTS.

 

Dalla quarta di copertina

This book discusses the design, electrical simulation and layout of a 2nd-order ?? analog-to-digital converter (ADC), using oxide thin-film transistors (TFTs) technology. The authors provide a unified view of materials science and electronics engineering, in order to guide readers from both fields through key topics. To accomplish this goal, background regarding materials, device physics, characterization techniques, circuit design and layout is given together with a detailed discussion of experimental data. The final simulation results clearly demonstrate the potential of the proposed circuit-level techniques, which enables the implementation of robust and energy efficient ADCs based on oxide TFTs, for moderate resolutions and conversion-rates.

 
  • Combines materials science and electronics engineering in the same book, making it possible to obtain a general overview, from TFTs production and characterization to their integration in relatively complex circuits; 
  • Adapts an a-Si:H TFT RPI model to simulate the behavior of these devices with good fitting to experimental data;
  • Describes the implementation of a 2nd-order ?? ADC using oxide TFTs.

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