Tunneling Field Effect Transistor Technology - Rilegato

Rilegato

ISBN 10: 3319316516 ISBN 13: 9783319316512

Casa editrice: Springer Verlag, 2016

Riassunto

This book provides a single-source reference to the state-of-the art intunneling field effect transistors (TFETs).  Readers will learn the TFETsphysics from advanced atomistic simulations, the TFETs fabrication process andthe important roles that TFETs will play in enabling integrated circuit designsfor power efficiency.

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Dalla quarta di copertina

This book provides a single-source reference tothe state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, theTFETs fabrication process and the important roles that TFETs will play inenabling integrated circuit designs for power efficiency. 

·        Provides comprehensive reference to tunneling field effecttransistors (TFETs);

·        Covers all aspects of TFETs, from device process to modeling andapplications;

·        Enables design of power-efficient integrated circuits, with lowpower consumption TFETs.

Dettagli dell'edizione

• Editore: Springer Verlag
• Data di pubblicazione: 2016
• Lingua: Inglese
• ISBN 10: 3319316516
• ISBN 13: 9783319316512
• Rilegatura: Copertina rigida
• Numero edizione: 1
• Numero di pagine: 224
• Redattore: Zhang Lining, Chan Mansun
• Contatto del produttore: non disponibile
• Persona responsabile: CMN Printpool Inh. Mathis Neumann; https://www.also.com/ec/cms5/en_6000/6000/index.jsp; ; Friedrich-Karl-Str. 9; Hamburg; Germania