Noise in Semiconductor Devices: Modeling and Simulation: 7 - Rilegato

Bonani, Fabrizio; Ghione, Giovanni

Rilegato

ISBN 10: 3540665838 ISBN 13: 9783540665830

Casa editrice: Springer-Verlag GmbH, 2001

Riassunto

The design and optimization of electronic systems often requires appraisal an of the electrical noise generated by active devices, and, at a technological level, the ability to properly design active elements in order to minimize, when possible, their noise. Examples of critical applications are, of course, receiver front-ends in RF and optoelectronic transmission systems, but also front-end stages in sensors and, in a completely different context, nonlinear circuits such as oscillators, mixers, and frequency multipliers. The rapid de­ velopment of silicon RF applications has recently fostered the interest toward low-noise silicon devices for the lower microwave band, such as low-noise MOS transistors; at the same time, the RF and microwave ranges are be­ coming increasingly important in fast optical communication systems. Thus, high-frequency noise modeling and simulation of both silicon and compound­ semiconductor based bipolar and field-effect transistors can be considered as an important and timely topic. This does not exclude, of course, low­ frequency noise, which is relevant also in the RF and microwave ranges when­ ever it is up-converted within a nonlinear system, either autonomous (as an oscillator) or non-autonomous (as a mixer or frequency multiplier). The aim of the present book is to provide a thorough introduction to the physics-based numerical modeling of semiconductor devices operating both in small-signal and in large-signal conditions. In the latter instance, only the non-autonomous case was considered, and thus the present treatment does not directly extend to oscillators.

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Dalla quarta di copertina

The book presents a comprehensive treatment of the numerical simulation of semiconductor devices. After an overview of the basic physics of fluctuations in semiconductors, noise modelling techniques are introduced for the small-signal case. In particular, a detailed treatment is devoted to Green's function approaches such as the Impedance Field Method. Then, the numerical implementation of such approaches within the framework of multi-dimensional numerical device models is discussed in detail with reference to the customary Finite-Boxes discretization scheme. Finally, the topic of large-signal noise simulation is addressed within the framework of the Harmonic Balance approach, and implementation details are given for the non-autonomous case. The application fields covered range from low-noise, small-signal amplifiers to nonlinear circuits such as RF and microwave frequency multipliers and mixers.

Dettagli dell'edizione

• Editore: Springer-Verlag GmbH
• Data di pubblicazione: 2001
• Lingua: Inglese
• ISBN 10: 3540665838
• ISBN 13: 9783540665830
• Rilegatura: Copertina rigida
• Numero di pagine: 252
• Contatto del produttore: Springer Nature Customer Service Center GmbH; ProductSafety@springernature.com; ; Europaplatz 3; Heidelberg; 69115; Germania