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Rupendra Kumar Sharma received Ph.D. degree in electronics from the University of Delhi, India in 2010. His Ph.D thesis was on the modeling, simulation and characterization of gate misalignment effect in DG MOSFETs. Dr. Sharma was a Postdoctoral Researcher with the Department of Electronics (DEIS) University of Bologna, Italy, where he was involved in numerical optimization and characterization of a dual N/P channel super-junction LDMOS for low dropout voltage regulator (LDO) applications. He has also served as a Marie-Curie experienced researcher for the Telecommunication Systems Institute; Technical University of Crete, Greece on a European Funding Research Program Compact Modeling Network ("COMON") on compact modeling of nanoscale multi-gate MOSFETs and of high-voltage MOSFETs. Currently, He is working on the project "Silicon carbide based power devices and their applications for power savings" funded by European Social Fund in collaboration with Czech Science Foundation at the Faculty of Electrical Engineering, Czech Technical University in Prague. He has authored or coauthored over 32 papers in various international journals and conference proceedings.
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Modeling and Simulation of Gate Mislaignment Effect in MOSFETs
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Rupendra Kumar Sharma received Ph.D. degree in electronics from the University of Delhi, India in 2010. His Ph.D thesis was on the modeling, simulation and characterization of gate misalignment effect in DG MOSFETs. Dr. Sharma was a Postdoctoral Researcher with the Department of Electronics (DEIS) University of Bologna, Italy, where he was involved in numerical optimization and characterization of a dual N/P channel super-junction LDMOS for low dropout voltage regulator (LDO) applications. He has also served as a Marie-Curie experienced researcher for the Telecommunication Systems Institute; Technical University of Crete, Greece on a European Funding Research Program Compact Modeling Network ('COMON') on compact modeling of nanoscale multi-gate MOSFETs and of high-voltage MOSFETs. Currently, He is working on the project 'Silicon carbide based power devices and their applications for power savings' funded by European Social Fund in collaboration with Czech Science Foundation at the Faculty of Electrical Engineering, Czech Technical University in Prague. He has authored or coauthored over 32 papers in various international journals and conference proceedings. 156 pp. Englisch. Codice articolo 9783639708028
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Sharma Rupendra KumarRupendra Kumar Sharma received Ph.D. degree in electronics from Delhi University, India in 2010. His research interest includes modeling, simulation, and characterization of nano-scale multi-gate MOSFETs and of . Codice articolo 151397932
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Taschenbuch. Condizione: Neu. Modeling and Simulation of Gate Mislaignment Effect in MOSFETs | Rupendra Kumar Sharma | Taschenbuch | 156 S. | Englisch | 2015 | Scholars' Press | EAN 9783639708028 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Codice articolo 104360048
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Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Rupendra Kumar Sharma received Ph.D. degree in electronics from the University of Delhi, India in 2010. His Ph.D thesis was on the modeling, simulation and characterization of gate misalignment effect in DG MOSFETs. Dr. Sharma was a Postdoctoral Researcher with the Department of Electronics (DEIS) University of Bologna, Italy, where he was involved in numerical optimization and characterization of a dual N/P channel super-junction LDMOS for low dropout voltage regulator (LDO) applications. He has also served as a Marie-Curie experienced researcher for the Telecommunication Systems Institute; Technical University of Crete, Greece on a European Funding Research Program Compact Modeling Network (¿COMON¿) on compact modeling of nanoscale multi-gate MOSFETs and of high-voltage MOSFETs. Currently, He is working on the project ¿Silicon carbide based power devices and their applications for power savings¿ funded by European Social Fund in collaboration with Czech Science Foundation at the Faculty of Electrical Engineering, Czech Technical University in Prague. He has authored or coauthored over 32 papers in various international journals and conference proceedings.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 156 pp. Englisch. Codice articolo 9783639708028
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Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - Rupendra Kumar Sharma received Ph.D. degree in electronics from the University of Delhi, India in 2010. His Ph.D thesis was on the modeling, simulation and characterization of gate misalignment effect in DG MOSFETs. Dr. Sharma was a Postdoctoral Researcher with the Department of Electronics (DEIS) University of Bologna, Italy, where he was involved in numerical optimization and characterization of a dual N/P channel super-junction LDMOS for low dropout voltage regulator (LDO) applications. He has also served as a Marie-Curie experienced researcher for the Telecommunication Systems Institute; Technical University of Crete, Greece on a European Funding Research Program Compact Modeling Network ('COMON') on compact modeling of nanoscale multi-gate MOSFETs and of high-voltage MOSFETs. Currently, He is working on the project 'Silicon carbide based power devices and their applications for power savings' funded by European Social Fund in collaboration with Czech Science Foundation at the Faculty of Electrical Engineering, Czech Technical University in Prague. He has authored or coauthored over 32 papers in various international journals and conference proceedings. Codice articolo 9783639708028
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