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Fundamental Physics of Amorphous Semiconductors: Proceedings of the Kyoto Summer Institute Kyoto, Japan, September 8-11, 1980 - Brossura

 
9783642816055: Fundamental Physics of Amorphous Semiconductors: Proceedings of the Kyoto Summer Institute Kyoto, Japan, September 8-11, 1980

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What are Non-Crystalline Semiconductors.- Defects in Covalent Amorphous Semiconductors.- Surface Effects and Transport Properties in Thin Films of Hydrogenated Silicon.- The Past, Present and Future of Amorphous Silicon.- Doping and the Density of States of Amorphous Silicon.- The Effect of Hydrogen and Other Additives on the Electronic Properties of Amorphous Silicon.- New Insights on Amorphous Semiconductors from Studies of Hydrogenated a-Ge, a-Si, a-Si1-xGex and a-GaAs.- Chemical Bonding of Alloy Atoms in Amorphous Silicon.- Photo-Induced Phenomena in Amorphous Semiconductors.- Theory of Electronic Properties of Amorphous Semiconductors.- Some Problems of the Electron Theory of Disordered Semiconductors.- The Anderson Localisation Problem.- Summary Talk.- Seminars Given During the KSI '80.- Photograph of the Participants of the KSI '80.- List of Participants.

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