Articoli correlati a Subthreshold Surface Potential Model for Short-Channel...

Subthreshold Surface Potential Model for Short-Channel Mosfet: Using Pseudo 2d Analysis - Brossura

Sarkar, Angsuman

 
9783659126093: Subthreshold Surface Potential Model for Short-Channel Mosfet: Using Pseudo 2d Analysis
Brossura
ISBN 10: 3659126098 ISBN 13: 9783659126093
Casa editrice: LAP LAMBERT Academic Publishing, 2014

Sinossi

As a result of aggressive downscaling, short-channel effects (SCEs) become a major threat for future downscaling especially in the sub-100nm region. In order to extend the International Technology Road-map for Semiconductors (ITRS) road-map beyond 100nm, Double-Gate (DG) MOSFET evinces himself as a major promising candidate due to its higher scaling capability. In this book, modelling using a pseudo- two-dimensional (2D) analysis was presented to explore the effect of scaling especially for subthreshold characteristics of short-channel DG and conventional single gate MOSFET.

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L'autore

Dr. Angsuman Sarkar is presently serving as an Assistant Professor of Electronics and Communication Engineering in Kalyani Government Engineering College, West Bengal, India. He received the M.Tech degree in VLSI & Microelectronics from Jadavpur University and later he was awarded the Ph.D degree from Jadavpur University.

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Editore
LAP LAMBERT Academic Publishing
Data di pubblicazione
2014
Lingua
Inglese
ISBN 10 
3659126098
ISBN 13 
9783659126093
Rilegatura
Copertina flessibile
Numero di pagine
84
Contatto del produttore
non disponibile
Persona responsabile
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