The electrical characteristic of bipolar transistor are studied using gummel plot focusing on gain of the structure. For high speed considerations we are analyzing the small signal model using scattering parameters. The gain of this work is approximate to 200 means high gain represents low leakages in the structure. The scattering parameters describe the high speed considerations. And gummel plot describes the currents verses base emitter voltage in common emitter configuration. In this graph we didn't get any leakages but other effects are shown. The gain plot is constant for 0.5V from 0.3V to 0.8V. This proposed BJT is used in advanced processors of high speed considerations and integrated circuits.
Le informazioni nella sezione "Riassunto" possono far riferimento a edizioni diverse di questo titolo.
N.S.Murti Sarma is a professor of Electronics and communications Engineering of Hosting College. P.Pradeep is identifed as a successful graduate research scholar by research assessment committee . Dr.S.P.Venumadhavarao is director of R&D of SNIST, Hyderabad.
Le informazioni nella sezione "Su questo libro" possono far riferimento a edizioni diverse di questo titolo.
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The electrical characteristic of bipolar transistor are studied using gummel plot focusing on gain of the structure. For high speed considerations we are analyzing the small signal model using scattering parameters. The gain of this work is approximate to 200 means high gain represents low leakages in the structure. The scattering parameters describe the high speed considerations. And gummel plot describes the currents verses base emitter voltage in common emitter configuration. In this graph we didn't get any leakages but other effects are shown. The gain plot is constant for 0.5V from 0.3V to 0.8V. This proposed BJT is used in advanced processors of high speed considerations and integrated circuits. 116 pp. Englisch. Codice articolo 9783659949371
Quantità: 2 disponibili
Da: Books Puddle, Woodside, NY, U.S.A.
Condizione: New. Codice articolo 26394736520
Quantità: 4 disponibili
Da: Majestic Books, Hounslow, Regno Unito
Condizione: New. Print on Demand. Codice articolo 401640535
Quantità: 4 disponibili
Da: moluna, Greven, Germania
Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: S. Murti Sarma N.N.S.Murti Sarma is a professor of Electronics and communications Engineering of Hosting College. P.Pradeep is identifed as a successful graduate research scholar by research assessment committee . Dr.S.P.Venumadhav. Codice articolo 158606961
Quantità: Più di 20 disponibili
Da: Biblios, Frankfurt am main, HESSE, Germania
Condizione: New. PRINT ON DEMAND. Codice articolo 18394736514
Quantità: 4 disponibili
Da: Revaluation Books, Exeter, Regno Unito
Paperback. Condizione: Brand New. 116 pages. 8.66x5.91x0.27 inches. In Stock. Codice articolo 365994937X
Quantità: 1 disponibili
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -The electrical characteristic of bipolar transistor are studied using gummel plot focusing on gain of the structure. For high speed considerations we are analyzing the small signal model using scattering parameters. The gain of this work is approximate to 200 means high gain represents low leakages in the structure. The scattering parameters describe the high speed considerations. And gummel plot describes the currents verses base emitter voltage in common emitter configuration. In this graph we didn't get any leakages but other effects are shown. The gain plot is constant for 0.5V from 0.3V to 0.8V. This proposed BJT is used in advanced processors of high speed considerations and integrated circuits.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 116 pp. Englisch. Codice articolo 9783659949371
Quantità: 1 disponibili
Da: AHA-BUCH GmbH, Einbeck, Germania
Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - The electrical characteristic of bipolar transistor are studied using gummel plot focusing on gain of the structure. For high speed considerations we are analyzing the small signal model using scattering parameters. The gain of this work is approximate to 200 means high gain represents low leakages in the structure. The scattering parameters describe the high speed considerations. And gummel plot describes the currents verses base emitter voltage in common emitter configuration. In this graph we didn't get any leakages but other effects are shown. The gain plot is constant for 0.5V from 0.3V to 0.8V. This proposed BJT is used in advanced processors of high speed considerations and integrated circuits. Codice articolo 9783659949371
Quantità: 1 disponibili