The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. Efficient methods for building the Schrödinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented.
Le informazioni nella sezione "Riassunto" possono far riferimento a edizioni diverse di questo titolo.
S.-M. Hong, A.-T. Pham, C. Jungemann
The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. Efficient methods for building the Schrödinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented.
Le informazioni nella sezione "Su questo libro" possono far riferimento a edizioni diverse di questo titolo.
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Condizione: Sehr gut. Zustand: Sehr gut | Seiten: 248 | Sprache: Englisch | Produktart: Bücher. Codice articolo 10841928/12
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Da: moluna, Greven, Germania
Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. first book on deterministic Boltzmann solvers for semiconductor devices first comprehensive description of the required numerical methods describes very recent and significant advances in the field of deterministic Boltzmann solversfirst book. Codice articolo 5249574
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Da: Brook Bookstore On Demand, Napoli, NA, Italia
Condizione: new. Questo è un articolo print on demand. Codice articolo 8ddb3fa59caa21297ffc72ebb2106851
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Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
Buch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. In the latter case the k p-Schrödinger equation has to be solved in addition to the Boltzmann transport equation and Poisson equation. Efficient methods for building the Schrödinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented. The features of the deterministic solvers for the 2D and 3D k-space are demonstrated by application to SOI NMOSFETs, THz SiGe HBTs and SiGe heterostructure DG PMOSFETs. For example, in the case of the PMOSFETs optimum surface/channel directions and strain conditions are investigated. 248 pp. Englisch. Codice articolo 9783709107775
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Da: AHA-BUCH GmbH, Einbeck, Germania
Buch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. In the latter case the k p-Schrödinger equation has to be solved in addition to the Boltzmann transport equation and Poisson equation. Efficient methods for building the Schrödinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented. The features of the deterministic solvers for the 2D and 3D k-space are demonstrated by application to SOI NMOSFETs, THz SiGe HBTs and SiGe heterostructure DG PMOSFETs. For example, in the case of the PMOSFETs optimum surface/channel directions and strain conditions are investigated. Codice articolo 9783709107775
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Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
Buch. Condizione: Neu. Neuware -The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. Efficient methods for building the Schrödinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 248 pp. Englisch. Codice articolo 9783709107775
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Da: Books Puddle, New York, NY, U.S.A.
Condizione: New. pp. 248. Codice articolo 264337044
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Da: Majestic Books, Hounslow, Regno Unito
Condizione: New. Print on Demand pp. 248 27 Illus. Codice articolo 3510859
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Da: Biblios, Frankfurt am main, HESSE, Germania
Condizione: New. PRINT ON DEMAND pp. 248. Codice articolo 184337054
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Da: Ria Christie Collections, Uxbridge, Regno Unito
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