Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon - Brossura

Pichler, Peter

Brossura

ISBN 10: 3709172047 ISBN 13: 9783709172049

Casa editrice: Springer, 2012

Riassunto

Basically all properties of semiconductor devices are influenced by the distribution of point defects in their active areas. This book contains the first comprehensive review of the properties of intrinsic point defects, acceptor and donor impurities, isovalent atoms, chalcogens, and halogens in silicon, as well as of their complexes. Special emphasis is placed on compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behavior from experimental and theoretical investigations. In addition, the book discusses the fundamental concepts of silicon and its defects, the electron system, diffusion, thermodynamics, and reaction kinetics which form the scientific basis needed for a thorough understanding of the text. Therefore, the book is able to provide an introduction to newcomers in this field up to a comprehensive reference for experts in process technology, solid-state physics, and simulation of semiconductor processes.

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Contenuti

Preface / Frequently Used Symbols / Explanation of Frequently Used Abbreviations Fundamental Concepts Silicon and Its Imperfections; The Electron System; Phenomenological and Atomistic Approaches to Diffusion; Thermodynamics; Reaction Kinetics; Exchange of Matter Between Phases; Bibliography Intrinsic Point Defects Concentration in Thermal Equilibrium; Diffusion of Intrinsic Point Defects; Self-Diffusion and Tracer Diffusion; Vacancies; Self-Interstitials; Frenkel Pairs; Bulk Recombination and Bulk Processes; Surface Recombination and Surface Processes; Initial Conditions; Bibliography Impurity Diffusion in Silicon Basic Mechanisms; Impurity-Point-Defect Pairs; Diffusion of Substitutional Impurities via Mobile Complexes with Intrinsic Point Defects; Pair-Diffusion Models; Frank-Turnbull Mechanism; Kick-Out Mechanism; Bibliography Isovalent Impurities Carbon; Germanium; Tin; Bibliography Dopants Dopant Clusters; Ion Pairing; Boron; Aluminum; Gallium; Indium; Nitrogen; Phosphorus; Arsenic; Antimony; Bibliography Chalcogens Oxygen; Sulfur; Selenium; Tellurium; Bibliography Halogens Fluorine; Chlorine; Bromine; Bibliography List of Tables / List of Figures / Index

Dettagli dell'edizione

• Editore: Springer
• Data di pubblicazione: 2012
• Lingua: Inglese
• ISBN 10: 3709172047
• ISBN 13: 9783709172049
• Rilegatura: Copertina flessibile
• Numero di pagine: 588
• Contatto del produttore: ProductSafety@springernature.com; ProductSafety@springernature.com; ; Poststr. 9; Darmstadt; 64293; Germania