This book is aimed at improving the power consumption and timing parameter for Dynamic Random Access Memory cells which are used in the construction of the main memory cell. DRAM is widely used for main memories in personal and mainframe computers and engineering workstations. DRAM memory cell is used for reading and write operation for single bit storage for circuits. A single DRAM cell is capable of storing 1bit data in the capacitor in the form of charge. In this book, three different DRAM memory cells are constructed on TANNER EDA, their simulation is carried out. Average power consumption, read access time, write access time and retention time values are calculated for all the three SDRAM cells. The three DRAM cells used are 4T, 3T, and 3T1D DRAM memory cells. Average power consumption, read access time, write access time and retention time-values are calculated at varying supply voltages. To improve the average power consumption, read access time, write access time, and retention time of the 3T1D DRAM memory cell techniques are applied. After the application of techniques on the circuit design, all the parameter values are again calculated and compared with existing value.
Le informazioni nella sezione "Riassunto" possono far riferimento a edizioni diverse di questo titolo.
Da: PBShop.store US, Wood Dale, IL, U.S.A.
PAP. Condizione: New. New Book. Shipped from UK. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Codice articolo L0-9786202557405
Quantità: Più di 20 disponibili
Da: California Books, Miami, FL, U.S.A.
Condizione: New. Codice articolo I-9786202557405
Quantità: Più di 20 disponibili
Da: PBShop.store UK, Fairford, GLOS, Regno Unito
PAP. Condizione: New. New Book. Delivered from our UK warehouse in 4 to 14 business days. THIS BOOK IS PRINTED ON DEMAND. Established seller since 2000. Codice articolo L0-9786202557405
Quantità: Più di 20 disponibili
Da: Ria Christie Collections, Uxbridge, Regno Unito
Condizione: New. In English. Codice articolo ria9786202557405_new
Quantità: Più di 20 disponibili
Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, Germania
Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -This book is aimed at improving the power consumption and timing parameter for Dynamic Random Access Memory cells which are used in the construction of the main memory cell. DRAM is widely used for main memories in personal and mainframe computers and engineering workstations. DRAM memory cell is used for reading and write operation for single bit storage for circuits. A single DRAM cell is capable of storing 1bit data in the capacitor in the form of charge. In this book, three different DRAM memory cells are constructed on TANNER EDA, their simulation is carried out. Average power consumption, read access time, write access time and retention time values are calculated for all the three SDRAM cells. The three DRAM cells used are 4T, 3T, and 3T1D DRAM memory cells. Average power consumption, read access time, write access time and retention time-values are calculated at varying supply voltages. To improve the average power consumption, read access time, write access time, and retention time of the 3T1D DRAM memory cell techniques are applied. After the application of techniques on the circuit design, all the parameter values are again calculated and compared with existing value. 80 pp. Englisch. Codice articolo 9786202557405
Quantità: 2 disponibili
Da: AHA-BUCH GmbH, Einbeck, Germania
Taschenbuch. Condizione: Neu. nach der Bestellung gedruckt Neuware - Printed after ordering - This book is aimed at improving the power consumption and timing parameter for Dynamic Random Access Memory cells which are used in the construction of the main memory cell. DRAM is widely used for main memories in personal and mainframe computers and engineering workstations. DRAM memory cell is used for reading and write operation for single bit storage for circuits. A single DRAM cell is capable of storing 1bit data in the capacitor in the form of charge. In this book, three different DRAM memory cells are constructed on TANNER EDA, their simulation is carried out. Average power consumption, read access time, write access time and retention time values are calculated for all the three SDRAM cells. The three DRAM cells used are 4T, 3T, and 3T1D DRAM memory cells. Average power consumption, read access time, write access time and retention time-values are calculated at varying supply voltages. To improve the average power consumption, read access time, write access time, and retention time of the 3T1D DRAM memory cell techniques are applied. After the application of techniques on the circuit design, all the parameter values are again calculated and compared with existing value. Codice articolo 9786202557405
Quantità: 1 disponibili
Da: moluna, Greven, Germania
Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Autor/Autorin: Asthana PrateekPrateek Asthana - University researcher at the National Institute of Technology (NIT) Hamirpur. He completed his masters at JSS Academy in the field of DRAM Memory Design. He has 6 papers in international reputed journ. Codice articolo 385947510
Quantità: Più di 20 disponibili
Da: buchversandmimpf2000, Emtmannsberg, BAYE, Germania
Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -This book is aimed at improving the power consumption and timing parameter for Dynamic Random Access Memory cells which are used in the construction of the main memory cell. DRAM is widely used for main memories in personal and mainframe computers and engineering workstations. DRAM memory cell is used for reading and write operation for single bit storage for circuits. A single DRAM cell is capable of storing 1bit data in the capacitor in the form of charge. In this book, three different DRAM memory cells are constructed on TANNER EDA, their simulation is carried out. Average power consumption, read access time, write access time and retention time values are calculated for all the three SDRAM cells. The three DRAM cells used are 4T, 3T, and 3T1D DRAM memory cells. Average power consumption, read access time, write access time and retention time-values are calculated at varying supply voltages. To improve the average power consumption, read access time, write access time, and retention time of the 3T1D DRAM memory cell techniques are applied. After the application of techniques on the circuit design, all the parameter values are again calculated and compared with existing value.VDM Verlag, Dudweiler Landstraße 99, 66123 Saarbrücken 80 pp. Englisch. Codice articolo 9786202557405
Quantità: 1 disponibili
Da: preigu, Osnabrück, Germania
Taschenbuch. Condizione: Neu. Analysis of DRAM Cell Designs for Nanometer-Scale Memories | DRAM Memory Design | Prateek Asthana | Taschenbuch | 80 S. | Englisch | 2020 | LAP LAMBERT Academic Publishing | EAN 9786202557405 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Codice articolo 118538389
Quantità: 5 disponibili