Da: liu xing, Nanjing, JS, Cina
paperback. Condizione: New. Paperback. Pub Date: 351 Language: Chinese Publisher: Harbin Institute of Technology Press. Properties. Preparation. Characterization and Devices of Posehene. Circular 3. Part 1 describes the preparation of graphene. which discusses the epitaxial growth of graphene in silicon carbide. and chemical vapor deposition method of graphene film growth. chemical method . Codice articolo NR030112
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