Chapter I describes deposition as a basic microelectronics technique. Plasma enhanced chemical vapor deposition (PECVD) is a technique widely accepted in microelectronics for the deposition of amorphous dielectric films such as silicon nitride and silicon oxide. The main advantage of PECVD stems from the intro duction of plasma energy to the CVD environment, which makes it possible to promote chemical reactions at relatively low temperatures. A natural extension of this is to use this plasma energy to lower the temperature required to obtain a crystalline deposit. This chapter discusses the PECVD technique and its ap plication to the deposition of dielectric, semiconductor, and conductor films of interest to microelectronics. Chapter 2 acquaints the reader with the technology and capabilities of plasma processing. Batch etching reactors and etching processes are approaching ma turity after more than ten years of development. Requirements of anisotropic and selective etching have been met using a variety of reactor configurations and etching gases. The present emphasis is the integration of plasma etching processes into the overall fabrication sequence. Chapter 3 reviews recent advances in high pressure oxidation technology and its applications to integrated circuits. The high pressure oxidation system, oxi dation mechanisms, oxidation-induced stacking faults, impurity segregation, and oxide quality are described. Applications to bipolar and MOS devices are also presented.
Le informazioni nella sezione "Riassunto" possono far riferimento a edizioni diverse di questo titolo.
1. Deposition for Microelectronics—Plasma Enhanced Chemical Vapor Deposition.- 2. Etching—Applications and Trends of Dry Etching.- 3. Oxidation Technology—The Application of High Pressure Oxidation to VLSI.- 4. Structures and Fabrication of Metal-Oxide-Silicon Field-Effect Transistor.- 5. Electron Beam Testing.- 6. Metallization for Very Large-Scale Integrated Circuits.- 7. MOS Technology Advances.- 8. CMOS Devices.- 9. Bipolar Gate Array Technology.- 10. Packaging Technologies for High-Performance Computers.- 11. Packaging Cost-Performance Computers.- 12. Microprocessors.- 13. Programmable Logic Arrays (PLAs)—Design and Application.- 14. Design for Testability.- 15. Silicon Design Methods and Computer-Aided Design Tools.- 16. Design Verification of VLSI Circuits.- 17. The Complexity of Design Automation Problems.- 18. Hierarchical Automatic Layout Algorithms for Custom Logic LSI.- 19. Layout Compiler-Annealing Applied to Floorplan Design.- 20. Automatic Placement.- 21. High Density Routing for Printed Wiring Board.- 22. Cell Based Physical Design for VLSI.- 23. Logic Design Expert System.- 24. Fault-Tolerant Multiple Processor Systems—Modeling and Analysis.- 25. Parallel Execution of Logic Programs.- 26. Organization and Operation of Massively Parallel Machines.- 27. Advances in Signal Processor Architecture.
Le informazioni nella sezione "Su questo libro" possono far riferimento a edizioni diverse di questo titolo.
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -Chapter I describes deposition as a basic microelectronics technique. Plasma enhanced chemical vapor deposition (PECVD) is a technique widely accepted in microelectronics for the deposition of amorphous dielectric films such as silicon nitride and silicon oxide. The main advantage of PECVD stems from the intro duction of plasma energy to the CVD environment, which makes it possible to promote chemical reactions at relatively low temperatures. A natural extension of this is to use this plasma energy to lower the temperature required to obtain a crystalline deposit. This chapter discusses the PECVD technique and its ap plication to the deposition of dielectric, semiconductor, and conductor films of interest to microelectronics. Chapter 2 acquaints the reader with the technology and capabilities of plasma processing. Batch etching reactors and etching processes are approaching ma turity after more than ten years of development. Requirements of anisotropic and selective etching have been met using a variety of reactor configurations and etching gases. The present emphasis is the integration of plasma etching processes into the overall fabrication sequence. Chapter 3 reviews recent advances in high pressure oxidation technology and its applications to integrated circuits. The high pressure oxidation system, oxi dation mechanisms, oxidation-induced stacking faults, impurity segregation, and oxide quality are described. Applications to bipolar and MOS devices are also presented. 960 pp. Englisch. Codice articolo 9789401170581
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Chapter I describes deposition as a basic microelectronics technique. Plasma enhanced chemical vapor deposition (PECVD) is a technique widely accepted in microelectronics for the deposition of amorphous dielectric films such as silicon nitride and silicon o. Codice articolo 5835899
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Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Chapter I describes deposition as a basic microelectronics technique. Plasma enhanced chemical vapor deposition (PECVD) is a technique widely accepted in microelectronics for the deposition of amorphous dielectric films such as silicon nitride and silicon oxide. The main advantage of PECVD stems from the intro duction of plasma energy to the CVD environment, which makes it possible to promote chemical reactions at relatively low temperatures. A natural extension of this is to use this plasma energy to lower the temperature required to obtain a crystalline deposit. This chapter discusses the PECVD technique and its ap plication to the deposition of dielectric, semiconductor, and conductor films of interest to microelectronics. Chapter 2 acquaints the reader with the technology and capabilities of plasma processing. Batch etching reactors and etching processes are approaching ma turity after more than ten years of development. Requirements of anisotropic and selective etching have been met using a variety of reactor configurations and etching gases. The present emphasis is the integration of plasma etching processes into the overall fabrication sequence. Chapter 3 reviews recent advances in high pressure oxidation technology and its applications to integrated circuits. The high pressure oxidation system, oxi dation mechanisms, oxidation-induced stacking faults, impurity segregation, and oxide quality are described. Applications to bipolar and MOS devices are also presented.Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 960 pp. Englisch. Codice articolo 9789401170581
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Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Chapter I describes deposition as a basic microelectronics technique. Plasma enhanced chemical vapor deposition (PECVD) is a technique widely accepted in microelectronics for the deposition of amorphous dielectric films such as silicon nitride and silicon oxide. The main advantage of PECVD stems from the intro duction of plasma energy to the CVD environment, which makes it possible to promote chemical reactions at relatively low temperatures. A natural extension of this is to use this plasma energy to lower the temperature required to obtain a crystalline deposit. This chapter discusses the PECVD technique and its ap plication to the deposition of dielectric, semiconductor, and conductor films of interest to microelectronics. Chapter 2 acquaints the reader with the technology and capabilities of plasma processing. Batch etching reactors and etching processes are approaching ma turity after more than ten years of development. Requirements of anisotropic and selective etching have been met using a variety of reactor configurations and etching gases. The present emphasis is the integration of plasma etching processes into the overall fabrication sequence. Chapter 3 reviews recent advances in high pressure oxidation technology and its applications to integrated circuits. The high pressure oxidation system, oxi dation mechanisms, oxidation-induced stacking faults, impurity segregation, and oxide quality are described. Applications to bipolar and MOS devices are also presented. Codice articolo 9789401170581
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