Radiation Defect Engineering: 37 - Rilegato

Vitali, Kozlovski; Vera, Abrosimova

 
9789812565211: Radiation Defect Engineering: 37
Rilegato
ISBN 10: 9812565213 ISBN 13: 9789812565211
Casa editrice: World Scientific Pub Co Inc, 2005

Sinossi

The increasing complexity of problems in semiconductor electronics and optoelectronics has exposed the insufficient potential of the technological doping processes currently used. One of the most promising techniques, which this book explores, is radiation doping: the intentional, directional modification of the properties of semiconductors under the action of various types of radiation. The authors consider the basic principles of proton interactions with single crystal semiconductors on the basis of both theory as well as practical results. All types of proton modifications of the materials known presently are analyzed in detail and exciting new fields of research in this direction are discussed.

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Editore
World Scientific Pub Co Inc
Data di pubblicazione
2005
Lingua
Inglese
ISBN 10 
9812565213
ISBN 13 
9789812565211
Rilegatura
Copertina rigida
Numero di pagine
253
Contatto del produttore
non disponibile
Persona responsabile
non disponibile