Advanced Display Technology: Next Generation Self-Emitting Displays - Brossura
Libro 3 di 3: Series in Display Science and Technology
Sinossi
- Chapter 1. Metal Oxide Thin-Film Transistor
Jae Kyeong Jeong (Professor at Hanyang University)
This review will give an overview of the recent progress in n-type oxide thin-film transistors (TFTs). The strategies toward high mobility will be addressed including the channel composition and structure, which is required to meet the demands of the ultra-high-resolution, large panel size and 3 dimensional visual effects as a megatrend of organic light emitting diodes and flexible displays. The device instability of oxide TFTs will be covered in details, which is critical for their implementation in the real product. The degradation mechanisms for the bias-thermal-stress and light illumination will be summarized including the carrier trapping/injection, defect creations such as oxygen vacancy, oxygen interstitial, hydrogen complex model. Finally, the self-aligned structure will be reviewed including the metallization process, copper interconnection for the AMOLED TV.
- Chapter 2. Pixel circuit of OLED display
Kee Chan Park (Professor at Konkuk University)Each pixel of OLED display needs an analog current source for uniform brightness over a whole display panel. Otherwise, mura due to the deviation of OLED characteristics or image sticking due to the irregular degradation of OLED device might be observed. A thin-film transistor (TFT) biased as subthreshold or saturation mode is used as the analog current source for OLED driving in each pixel. However, the characteristics of TFTs are not uniform at all. Therefore, another mura occurs due to the non-uniform current-voltage characteristics of the TFTs. Various circuit techniques have been proposed and employed in the OLED display product according to the applications. The operating principles of these circuit techniques will be explained, and the pros and cons of several representative circuit structures will be dealt with in this chapter.
- Chapter 3. Phosphorescent OLEDs for power efficient displays
Michael S. Weaver and Tyler Fleetham (UDC)
In this chapter we will discuss phosphorescent OLED (PHOLED) materials and technologies. PHOLEDs are now used in virtually all OLED display products. We will discuss here the history of this technology, the inherent advantages of these materials and their future. The spin-orbit coupling is therefore enhanced, resulting in a mixing between the MLCT triplet and the singlet. To ensure high efficiency, particularly at high luminance levels, it is essential to minimize the triplet excited state lifetime. To achieve this, the MLCT triplet energy should be lower than that of the ligand. PHOLEDs incorporating phosphorescent organometallic compounds today have potential to exceed 40% EQE. Later we will discuss where next this technology can be even further improved.
- Chapter 4. TADF and hyperfluorescence
Junji Adachi, Hisashi Okada (Kyulux)
TADF (thermally activated delayed fluorescence) is recognized the third generation of OLED emitting technology, which provides highly efficient emission without using any rare metal, such as iridium. TADF, which is designed small the energy gap between the singlet and triplet excited state, enables efficient spin up-conversion from triplet
Le informazioni nella sezione "Riassunto" possono far riferimento a edizioni diverse di questo titolo.
