ADVANCES IN SOLID STATE CIRCUIT TECHNOLOGIES

Nelson Boli?var, Ph.D

ISBN 10: 1680943979 / ISBN 13: 9781680943979

Editore: Arcler Press LLC, 2017

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Dati bibliografici

• Titolo: ADVANCES IN SOLID STATE CIRCUIT TECHNOLOGIES
• Editore: Arcler Press LLC
• Data di pubblicazione: 2017
• Lingua: Inglese
• ISBN 10: 1680943979
• ISBN 13: 9781680943979
• Rilegatura: Rilegato
• Condizione: New

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Riassunto

Solid-state transistors and integrated circuits has spawned the information age in the last 50 years. Information is at people’s hands and communications take seconds. Such rapid development stems from tremendous developments in both hardware and software such as solid-state circuits. Approaches such as parallel processing, new circuit design, and particularly novel materials are necessary.

Advances in Solid State Circuit Technologies provides concepts and current improvements of circuit technology. The applications of solid state in circuit’s elements go from simple led technology to complex transistors and chips. The advances take the new technologies to smaller sizes and faster operations. First chapter presents fault diagnosis of DC analog CMOS circuits and second chapter explores on high-accuracy function synthesizer circuit with applications in signal processing. Third chapter provides a new current-controlled-power technique for small signal applications. In fourth chapter, a design of a symmetry-type floating impedance scaling circuit and the improvement method of its operation bandwidth are proposed. Fifth chapter elaborates on the design and analysis of a power efficient linearly tunable cross-coupled transconductor having separate bias control, and sixth chapter presents a novel and unique polymorphic processor design. In seventh chapter, the differential ULV inverter is presented. The improvement in term of stability and delay relative to the ULV is elaborated. Furthermore, the reliability, yield and the defect tolerance of the differential ULV inverter compared with both standards CMOS and with ULV floating-gate inverter are examined. Chip design of a low-voltage wideband continuous-time sigma-delta modulator with DWA technology for WIMAX applications are highlighted in eighth chapter. Ninth chapter introduces the system architecture of the wideband continuous-time sigma-delta modulator and ninth chapter presents the design of a novel two-stage bulk-input pseudo differential Operational Transconductance Amplifier. Tenth chapter explores on the performance improvement of phase-change memory cell using AlSb3Te and atomic layer deposition TiO2 buffer layer and eleventh chapter highlights emerging nonvolatile memory technologies. Probe-based storage technologies are illustrated in twelfth chapter and thirteenth chapter presents a comparative analysis result of the proposed scheme and the conventional thyristor protection scheme incorporating a clamp NMOS device. Fourteenth chapter presents a CMOS 3.1 - 10.6 GHZ UWB LNA employing modified derivative superposition method. In fifteenth chapter, the challenges and opportunities of CBRAM devices using different switching materials such as chalcogenides, oxides, and bilayers in different structures have been reviewed. In sixteenth chapter, we focus our attention on the recent development of the research on the QC effect in CF-based non-volatile RS devices including basic QC phenomenon in resistive random access memory (RRAM), RS mechanisms, device structures, materials, theory, and modeling of conductance quantization in RRAM. In seventeenth chapter, we report on electrical instabilities in pentacene-based transistors with Mylar and PMMA/Mylar gate dielectrics transferred by a lamination process in ambient environment. Special emphasis is given on comparing the two types of devices in ON state and subthreshold regions under gate bias stress. Eighteenth chapter presents an introduction of memristor and modelling of memristor with nonlinear dopant drift with new parameter. Ninteenth chapter focuses on canning head for the apertureless near field optical microscope and measurement of gamma-rays using smartphones is highlighted in twentieth chapter. Last chapter presents an approach on design of low power level shifter circuit with sleep transistor using multisupply voltage scheme. These chapters contain applications, written by renowned experts in the respective fields on to integrated circuits and materials science. It is intended for a broad readership which includes electrical engineers and material scientists. Readers will be able to familiarize themselves with the latest technologies in the various fields.