Advanced Physical Models for Silicon Device Simulation (Computational Microelectronics)
Schenk, Andreas
ISBN 10: 3709173345 ISBN 13: 9783709173343
Editore: Springer, 2012
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From the reviews: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field […], and a useful source of reference for experienced users ..." Microelectronics Journal
Recensione: "... this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field who wants to know what can and cannot be done, and a useful source of reference for experienced users ...” Microelectronics Journal
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Titolo: Advanced Physical Models for Silicon Device ...
Casa editrice: Springer
Data di pubblicazione: 2012
Legatura: Brossura
Condizione: New
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Advanced Physical Models for Silicon Device Simulation
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Condizione: New. Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Excellent overview about the most widely used modelsDiscussion of accuracy and application resultsComparison of theory and experimental dataFrom the reviews: . this is a well produced book, written in a easy to read style, and will also be. Codice articolo 5250408
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Taschenbuch. Condizione: Neu. Advanced Physical Models for Silicon Device Simulation | Andreas Schenk | Taschenbuch | xviii | Englisch | 2012 | Springer | EAN 9783709173343 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. Codice articolo 106020265
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Advanced Physical Models for Silicon Device Simulation (Computational Microelectronics)
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Condizione: New. Codice articolo ABLIING23Mar3113020324210
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Advanced Physical Models for Silicon Device Simulation
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Springer, Springer Okt 2012, 2012
ISBN 10: 3709173345
ISBN 13: 9783709173343
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Taschenbuch. Condizione: Neu. This item is printed on demand - Print on Demand Titel. Neuware -Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of 'taylored quantum-mechanics'. Each model is compared with experimental data and applied to a number of simulation exam ples. The problems when starting from 'first principles' and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems.Springer-Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg 376 pp. Englisch. Codice articolo 9783709173343
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Taschenbuch. Condizione: Neu. Druck auf Anfrage Neuware - Printed after ordering - Device simulation has two main purposes: to understand and depict the physical processes in the interior of a device, and to make reliable predictions of the behavior of an anticipated new device generation. Towards these goals the quality of the physical models is decisive. The introductory chapter of this book contains a critical review on models for silicon device simulators, which rely on moments of the Boltzmann equation. With reference to fundamental experimental and theoretical work an extensive collection of widely used models is discussed in terms of physical accuracy and application results. This review shows that the quality and efficiency of the phys ical models, which have been developed for the purpose of numerical simulation over the last three decades, is sufficient for many applications. Nevertheless, the basic understanding of the microscopic processes, as well as the uniqueness and accuracy of the models are still unsatisfactory. Hence, the following chapters of the book deal with the derivation of physics-based models from a microscopic level, also using new approaches of 'taylored quantum-mechanics'. Each model is compared with experimental data and applied to a number of simulation exam ples. The problems when starting from 'first principles' and making the models suitable for a device simulator will also be demonstrated. We will show that demands for rapid computation and numerical robustness require a compromise between physical soundness and analytical simplicity, and that the attainable accuracy is limited by the complexity of the problems. Codice articolo 9783709173343
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Advanced Physical Models for Silicon Device Simulation
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Springer Vienna Okt 2012, 2012
ISBN 10: 3709173345
ISBN 13: 9783709173343
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Taschenbuch. Condizione: Neu. This item is printed on demand - it takes 3-4 days longer - Neuware -From the reviews: '. this is a well produced book, written in a easy to read style, and will also be a very useful primer for someone starting out the field [.], and a useful source of reference for experienced users .' Microelectronics Journal 376 pp. Englisch. Codice articolo 9783709173343
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Advanced Physical Models for Silicon Device Simulation (Computational Microelectronics)
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Condizione: New. pp. 376. Codice articolo 2648028720
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