Analysis and Simulation of Heterostructure Devices

Rüdiger Quay

ISBN 10: 3211405372 / ISBN 13: 9783211405376

Editore: Springer Vienna, Springer Dez 2003, 2003

Riguardo questo articolo

This item is printed on demand - Print on Demand Titel. Neuware -Communication and information systems are subject to rapid and highly so phisticated changes. Currently semiconductor heterostructure devices, such as Heterojunction Bipolar Transistors (HBTs) and High Electron Mobility Transis tors (HEMTs), are among the fastest and most advanced high-frequency devices. They satisfy the requirements for low power consumption, medium integration, low cost in large quantities, and high-speed operation capabilities in circuits. In the very high-frequency range, cut-off frequencies up to 500 GHz [557] have been reported on the device level. HEMTs and HBTs are very suitable for high efficiency power amplifiers at 900 MHz as well as for data rates higher than 100 Gbitfs for long-range communication and thus cover a broad range of appli cations. To cope with explosive development costs and the competition of today's semicon ductor industry, Technology Computer-Aided Design (TCAD) methodologies are used extensively in development and production. As of 2003, III-V semiconductor HEMT and HBT micrometer and millimeter-wave integrated circuits (MICs and MMICs) are available on six-inch GaAs wafers. SiGe HBT circuits, as part of the CMOS technology on eight-inch wafers, are in volume production. Simulation tools for technology, devices, and circuits reduce expensive technological efforts. This book focuses on the application of simulation software to heterostructure devices with respect to industrial applications. In particular, a detailed discussion of physical modeling for a great variety of materials is presented.Springer-Verlag KG, Sachsenplatz 4-6, 1201 Wien 324 pp. Englisch.

Codice articolo 9783211405376

Dati bibliografici

• Titolo: Analysis and Simulation of Heterostructure Devices
• Editore: Springer Vienna, Springer Dez 2003
• Data di pubblicazione: 2003
• Lingua: Inglese
• ISBN 10: 3211405372
• ISBN 13: 9783211405376
• Rilegatura: Buch
• Condizione: Neu
• Dimensioni: 241 L x 160 A x 23 P (millimetri) 241 millimetri di larghezza per 160 millimetri di altezza per 23 millimetri di profondità
• Peso: 653 grammi

Descrizione articolo

Riassunto

The topic of this monograph is the physical modeling of heterostructure devices. A detailed discussion of physical models and parameters for compound semiconductors is presented including the relevant aspects of modern submicron heterostructure devices. More than 25 simulation examples for different types of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and high electron mobility transistors (HEMTs) are given in comparison with experimental data from state-of-the-art devices.

Contenuti

List of Acronyms List of Symbols Introduction State-of-the-Art of Materials, Device Modeling, and RF Devices Physical Models RF Parameter Extraction for HEMTs and HBTs Heterojunction Bipolar Transistors High Electron Mobility Transistors Novel Devices Appendix: Benchmark Structures References