Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor

Lingua: inglese

Editore: Springer Nature Singapore Nov 2017, 2017

9811065497 / 9789811065491

Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.

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Venditore AbeBooks dal 11 gennaio 2012

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This item is printed on demand - it takes 3-4 days longer - Neuware -This book discusses analytical approaches and modeling of the breakdown voltage (BV) effects on graphene-based transistors. It presents semi-analytical models for lateral electric field, length of velocity saturation region (LVSR), ionization coefficient ( ), and breakdown voltage (BV) of single and double-gate graphene nanoribbon field effect transistors (GNRFETs). The application of Gauss's law at drain and source regions is employed in order to derive surface potential and lateral electric field equations. LVSR is then calculated as a solution of surface potential at saturation condition. The ionization coefficient is modelled and calculated by deriving equations for probability of collisions in ballistic and drift modes based on the lucky drift theory of ionization. The threshold energy of ionization is computed using simulation and an empirical equation is derived semi-analytically. Lastly avalanche breakdown condition is employed to calculate the lateral BV. On the basis of this, simple analytical and semi-analytical models are proposed for the LVSR and BV, which could be used in the design and optimization of semiconductor devices and sensors. The proposed equations are used to examine BV at different channel lengths, supply voltages, oxide thickness, GNR widths, and gate voltages. Simulation results show that the operating voltage of FETs could be as low as 0.25 V in order to prevent breakdown. However, after optimization, it can go as high as 1.5 V. This work is useful for researchers working in the area of graphene nanoribbon-based transistors. 96 pp. Englisch.…

Codice articolo 9789811065491

Titolo
Analytical Modelling of Breakdown Effect in Graphene Nanoribbon Field Effect Transistor
Autore
Mahdiar Ghadiry
Editore
Springer Nature Singapore Nov 2017
Anno di pubblicazione
2017
Condizione
Neu
Rilegatura
Taschenbuch
Lingua
inglese
ISBN 10
9811065497
ISBN 13
9789811065491
Peso dell'articolo
180 grammi
Dimensioni
235x155x6 mm

BuchWeltWeit Ludwig Meier e.K.

Bergisch Gladbach, Germania

Venditore con 5 stelle

Venditore AbeBooks dal 11 gennaio 2012

Tariffe di spedizione da Germania a U.S.A.

ArticoloDa 5 a 15 giorni lavorativiDa 5 a 15 giorni lavorativi
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BuchWeltWeit Ludwig Meier e.K.

Germania