Atomic Scale Characterization and First-Principles Studies of SiN Interfaces (Paperback)

Weronika Walkosz

ISBN 10: 1461428572 / ISBN 13: 9781461428572

Editore: Springer-Verlag New York Inc., New York, NY, 2013

Riguardo questo articolo

Paperback. This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline bSi3N4 and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. This book offers results that influence many high temperature and pressure applications. It provides findings that will offer increased control over the performance of ceramic and semiconductor materials for a wide-range of applications. Shipping may be from multiple locations in the US or from the UK, depending on stock availability.

Codice articolo 9781461428572

Dati bibliografici

• Titolo: Atomic Scale Characterization and First-Principles Studies of SiN Interfaces (Paperback)
• Editore: Springer-Verlag New York Inc., New York, NY
• Data di pubblicazione: 2013
• Lingua: Inglese
• ISBN 10: 1461428572
• ISBN 13: 9781461428572
• Rilegatura: Paperback
• Condizione: new

Descrizione articolo

Riassunto

This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline ß-Si₃N₄ and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.

Dalla quarta di copertina

This thesis presents results from a combined atomic-resolution Z-contrast and annular bright-field imaging and electron energy loss spectroscopy in the Scanning Transmission Electron Microscopy, as well as first principles studies of the interfaces between crystalline ß-Si₃N₄ and amorphous (i) CeO2-x as well as (ii) SiO2 intergranular film (IGF). These interfaces are of a great fundamental and technological interest because they play an important role in the microstructural evolution and mechanical properties of Si3N4 ceramics used in many high temperature and pressure applications. The main contribution of this work is its detailed description of the bonding characteristics of light atoms, in particular oxygen and nitrogen, at these interfaces, which has not been achieved before. The atomic-scale information on the arrangement of both light and heavy atoms is critical for realistic modeling of interface properties, such as interface strength and ion transport, and will facilitate increased control over the performance of ceramic and semiconductor materials for a wide-range of applications.

This Doctoral Thesis has been accepted by the University of Illinois-Chicago, Chicago, USA.