The Blue Light-Emitting Diodes: Fabrication and Characterization of Light-Emitting Diodes with Varying InGaN/GaN Multiple Quantum-Well Structures. Questo articolo non è disponibile.
Lingua: inglese
Editore: VDM Verlag Dr. Müller, 2010
- Brossura
- Nuovo

Da: Ria Christie Collections, Uxbridge, Regno UnitoRia Christie Collections
Venditore con 5 stelle
Venditore AbeBooks dal 25 marzo 2015
Non disponibile
Brossura
Condizione: Nuovo
EUR 66,10
Descrizione dell’articolo da parte del venditore
In English.
Codice articolo ria9783639268195_new
- Titolo
- The Blue Light-Emitting Diodes: Fabrication and Characterization of Light-Emitting Diodes with Varying InGaN/GaN Multiple Quantum-Well Structures
- Autore
- Choi, Rak-Jun; Hahn, Yoon-Bong; Lee, Hyung-Jae
- Editore
- VDM Verlag Dr. Müller
- Anno di pubblicazione
- 2010
- Condizione
- New
- Rilegatura
- Brossura
- Lingua
- inglese
- ISBN 10
- 3639268199
- ISBN 13
- 9783639268195
- Peso dell'articolo
- 359 grammi
In this book, I have optimized the growth of n- and p-GaN films, and high quality InGaN/GaN multiple quantum wells (MQWs) on sapphire (0001) substrate by a low pressure metal-organic chemical vapour deposition and have fabricated high brightness InGaN/GaN MQW light-emitting diodes (LEDs) under optimum conditions. To improve quantum efficiency which is generally poor in the conventional rectangular-shaped QWs due to spatial indirect recombination induced by internal piezoelectric field, we proposed a possibility of quantum dot (QD) engineering with triangular-shaped band structure in the InGaN/GaN QWs. The structural and optical properties of the InGaN/GaN MQWs with different threading dislocation densities were also investigated. The effects of Si-doped n-GaN and Mg-doped p-GaN layers on the electrical and optical properties of the InGaN/GaN MQW LEDs were investigated and optimized under various growth parameters.
"Riassunto" può appartenere a un’altra edizione di questo titolo.
Informazioni sull’autore
I got the degree of Ph.D. in Dept. of Chemical Engineering and Semiconductor Physics Research Centers, Chonbuk National University, South Korea. I worked at the Venture Business Laboratory of the University of Tokushima, Japan. I have studied on growth and fabrication of III-nitrides semiconductor such as LEDs and LDs.
I got the degree of Ph.D. in Dept. of Chemical Engineering and Semiconductor Physics Research Centers, Chonbuk National University, South Korea. I worked at the Venture Business Laboratory of the University of Tokushima, Japan. I have studied on growth and fabrication of III-nitrides semiconductor such as LEDs and LDs.
I got the degree of Ph.D. in Dept. of Chemical Engineering and Semiconductor Physics Research Centers, Chonbuk National University, South Korea. I worked at the Venture Business Laboratory of the University of Tokushima, Japan. I have studied on growth and fabrication of III-nitrides semiconductor such as LEDs and LDs.
I got the degree of Ph.D. in Dept. of Chemical Engineering and Semiconductor Physics Research Centers, Chonbuk National University, South Korea. I worked at the Venture Business Laboratory of the University of Tokushima, Japan. I have studied on growth and fabrication of III-nitrides semiconductor such as LEDs and LDs.
I got the degree of Ph.D. in Dept. of Chemical Engineering and Semiconductor Physics Research Centers, Chonbuk National University, South Korea. I worked at the Venture Business Laboratory of the University of Tokushima, Japan. I have studied on growth and fabrication of III-nitrides semiconductor such as LEDs and LDs.
"Descrizione articolo" può appartenere a un’altra edizione di questo titolo.