Cobalt Doping of Semiconducting Boron Carbide Using Cobaltocene

Lingua: inglese

Editore: Legare Street Press Nov 2012, 2012

1288316178 / 9781288316175

Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH

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Venditore AbeBooks dal 14 agosto 2006

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Neuware - The decomposition of cobaltocene and metacarborane (closo-1,7-dicarbadecaborane) under low energy electron irradiation at about 200 K results in a material with the Fermi level closer to the valence band than the material resulting from the decomposition of metacarborane alone. This indicates that cobaltocene provides a relatively p-type dopant as seen in ultraviolet photoemission spectroscopy/inverse photoemission spectroscopy. Upon warming to room temperature, however, the Fermi level shifts towards the conduction band, suggesting an n-type dopant. This temperature dependent surface photovoltage effect is not compelling evidence for the majority carrier type but does suggest an increase in the carrier concentration in semiconducting boron carbides with cobaltocene fragment doping. Using cobaltocene to introduce dopants into a orthocarborane (closo-1,2- dicarbadecaborane) derived film, deposited by plasma enhanced chemical vapor deposition, a semiconducting boron carbide homojunction diode has been fabricated. This diode has potential applications in neutron detection, direct neutron power conversion, and as a dilute magnetic semiconductor.This work has been selected by scholars as being culturally important, and is part of the knowledge base of civilization as we know it. This work was reproduced from the original artifact, and remains as true to the original work as possible. Therefore, you will see the original copyright references, library stamps (as most of these works have been housed in our most important libraries around the world), and other notations in the work.This work is in the public domain in the United States of America, and possibly other nations. Within the United States, you may freely copy and distribute this work, as no entity (individual or corporate) has a copyright on the body of the work.As a reproduction of a historical artifact, this work may contain missing or blurred pages, poor pictures, errant marks, etc. Scholars believe, and we concur, that this work is important enough to be preserved, reproduced, and made generally available to the public. We appreciate your support of the preservation process, and thank you for being an important part of keeping this knowledge alive and relevant.…

Codice articolo 9781288316175

Titolo
Cobalt Doping of Semiconducting Boron Carbide Using Cobaltocene
Autore
Lonnie Carlson
Editore
Legare Street Press Nov 2012
Anno di pubblicazione
2012
Condizione
Neu
Rilegatura
Taschenbuch
Lingua
inglese
ISBN 10
1288316178
ISBN 13
9781288316175
Peso dell'articolo
156 grammi
Dimensioni
234x156x5 mm

AHA-BUCH GmbH

Einbeck, Germania

Venditore con 5 stelle

Venditore AbeBooks dal 14 agosto 2006

Tariffe di spedizione da Germania a U.S.A.

ArticoloDa 7 a 10 giorni lavorativiDa 5 a 7 giorni lavorativi
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