Compact Modeling for MOSFET Devices : Small-Signal Models for Multiple-Gate Transistors

Oana Moldovan

ISBN 10: 3639148827 / ISBN 13: 9783639148824

Editore: VDM Verlag Dr. Müller, 2009

Riguardo questo articolo

nach der Bestellung gedruckt Neuware - Printed after ordering - Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design. In this book we present explicit compact charge and capacitance models adapted for doped and undoped devices (doped Double-Gate (DG) MOSFETs, undoped DG MOSFETs, undoped Ultra-Thin-Body (UTB) MOSFETs and undoped Surrounding-Gate Transistors (SGTs)). The main advantage of our work is the analytical and explicit character of the charge and capacitance model that makes it easy to be implemented in circuit simulators.We also show the impact of important geometrical parameters such as source and drain thickness, fin spacing, spacer width, on the parasitic fringing capacitance component of FinFETs and PI-gate MOSFETs.

Codice articolo 9783639148824

Dati bibliografici

• Titolo: Compact Modeling for MOSFET Devices : Small-Signal Models for Multiple-Gate Transistors
• Editore: VDM Verlag Dr. Müller
• Data di pubblicazione: 2009
• Lingua: Inglese
• ISBN 10: 3639148827
• ISBN 13: 9783639148824
• Rilegatura: Taschenbuch
• Condizione: Neu
• Dimensioni: 22 L x 15 A x 0,9 P centimetri 22 centimetri di larghezza per 15 centimetri di altezza per 0,9 centimetri di profondità

Descrizione articolo

Riassunto

Compact models of devices are used in circuit simulators, in order to predict the functionality of circuits. Multiple-gate devices will be preferred in nanoscale circuits, thus calling for accurate and reliable compact models, an important prerequisite for successful circuit design. In this book we present explicit compact charge and capacitance models adapted for doped and undoped devices (doped Double-Gate (DG) MOSFETs, undoped DG MOSFETs, undoped Ultra-Thin-Body (UTB) MOSFETs and undoped Surrounding-Gate Transistors (SGTs)). The main advantage of our work is the analytical and explicit character of the charge and capacitance model that makes it easy to be implemented in circuit simulators. We also show the impact of important geometrical parameters such as source and drain thickness, fin spacing, spacer width, on the parasitic fringing capacitance component of FinFETs and PI-gate MOSFETs.

L'autore

Oana Moldovan; PhD. in Electronics Engineering from Universitat Rovira i Virgili, Spain. Postdoctoral researcher at the Universitat Autònoma de Barcelona. Benjamin Iñiguez; PhD. in Physics from the University of the Balearic Islands, Spain. Titular Professor in the Department of Electronic Engineering, Universitat Rovira i Virgili, Spain.