Defect Complexes in Semiconductor Structures : Proceedings of the International School held in Mátrafüred, Hungary .,.,.

Giber, J. ; Beleznay, F. ; Szép, I. C. ; & László, J. ; editors :

ISBN 10: 3540119868 / ISBN 13: 9783540119869

Editore: Springer-Verlag, Berlin / Heidelberg, 1983

Riguardo questo articolo

24x16cm, vi,307 pp., Series: Lecture Notes in Physics, 175. Full title reads: "Defect Complexes in Semiconductor Structures : Proceedings of the International School held in Mátrafüred, Hungary September 13 17, 1982".

Codice articolo 027493

Dati bibliografici

• Titolo: Defect Complexes in Semiconductor Structures : Proceedings of the International School held in Mátrafüred, Hungary .,.,.
• Editore: Springer-Verlag, Berlin / Heidelberg
• Data di pubblicazione: 1983
• ISBN 10: 3540119868
• ISBN 13: 9783540119869
• Rilegatura: orig. wrappers
• Condizione: Minor wear. VG.
• Cataloghi dei venditori:
  • Physics

Descrizione articolo

Contenuti

A technologist's view on defects.- Characterization of impurities and defects by electron paramagnetic resonance and related techniques.- Review of the possibilities of electron microscopy in the identification of defect structures.- Electrical and optical measuring techniques for flaw states.- Theory of defect complexes.- Critical comparison of the theoretical models for anomalous large lattice relaxation in III–V compounds.- Vacancy related structure defects in SiO2 — Cyclic cluster calculations compared with experimental results.- A new model for the Si-A center.- Defect complexing in iron-doped silicon.- Photoluminescence of defect complexes in silicon.- Electron microscopical analysis of the stacking fault behaviour in inert-gas annealed Czochralski silicon.- Oxygen precipitation and the generation of secondary defects in oxygen-rich silicon.- Electrical and optical properties of oxygen-related donors in silicon formed at temperatures from 600 to 850 °c.- On the field dependence of capture and emission processes at deep centres.- Lattice matched heterolayers.- Compositional transition layers in heterostructure.- Defect complexes in III–V compounds.- Low frequency current oscillations due to electron retrapping by the AsGa antisite defect in GaAs.- Main electron traps in gaas: Aggregates of antisite defects.- Defect reactions in gap caused by zinc diffusion.- Nonstatistical defect surroundings in mixed crystals — the selfactivated luminescence centre in ZnSxSe1-x.- Structure and properties of the Si-SiO2 interregion.- Radiation defects of the semiconductor-insulator interface.- Analysis of Si/SiO2 interface defects by the method of term spectroscopy.- Theoretical aspects of laser annealing.- Radiation methods for creation of heterostructures on silicon.- Ion beam gettering in GaP.- Panel discussion.- Mechanical stress induced defect creation in GaP.