Design, Simulation and Applications of Inductors and Transformers for Si RF ICs

Ali M. Niknejad

ISBN 10: 0792379861 / ISBN 13: 9780792379867

Editore: Springer, Springer, 2000

Riguardo questo articolo

Druck auf Anfrage Neuware - Printed after ordering - The modern wireless communication industry has put great demands on circuit designers for smaller, cheaper transceivers in the gigahertz frequency range. One tool which has assisted designers in satisfying these requirements is the use of on-chip inductiveelements (inductors and transformers) in silicon (Si) radio-frequency (RF) integrated circuits (ICs). These elements allow greatly improved levels of performance in Si monolithic low-noise amplifiers, power amplifiers, up-conversion and down-conversion mixers and local oscillators. Inductors can be used to improve the intermodulation distortion performance and noise figure of small-signal amplifiers and mixers. In addition, the gain of amplifier stages can be enhanced and the realization of low-cost on-chip local oscillators with good phase noise characteristics is made feasible. In order to reap these benefits, it is essential that the IC designer be able to predict and optimize the characteristics of on-chip inductiveelements. Accurate knowledge of inductance values, quality factor (Q) and the influence of ad- cent elements (on-chip proximity effects) and substrate losses is essential. In this book the analysis, modeling and application of on-chip inductive elements is considered. Using analyses based on Maxwells equations, an accurate and efficient technique is developed to model these elements over a wide frequency range. Energy loss to the conductive substrate is modeled through several mechanisms, including electrically induced displacement and conductive c- rents and by magnetically induced eddy currents. These techniques have been compiled in a user-friendly software tool ASITIC (Analysis and Simulation of Inductors and Transformers for Integrated Circuits).

Codice articolo 9780792379867

Dati bibliografici

• Titolo: Design, Simulation and Applications of Inductors and Transformers for Si RF ICs
• Editore: Springer, Springer
• Data di pubblicazione: 2000
• Lingua: Inglese
• ISBN 10: 0792379861
• ISBN 13: 9780792379867
• Rilegatura: Buch
• Condizione: Neu
• Dimensioni: 241 L x 160 A x 17 P (millimetri) 241 millimetri di larghezza per 160 millimetri di altezza per 17 millimetri di profondità
• Peso: 494 grammi

Descrizione articolo

Riassunto

Wireless RF and microwave ICs depend critically on passive devices, such as inductors, capacitors, and transformers. Passive devices allow the optimization of key RF circuit building blocks by minimizing noise, maximizing gain and frequency of operation, and minimizing power. The integration of passive devices on the Si IC substrate requires a critical understanding of substrate coupling and loss, including electrically induced conductive and displacement current flowing in the substrate as well as magnetically induced eddy currents. This text provides a deep understanding of the physics involved in the operation of these devices at microwave frequencies. Additionally, the book tackles two critical blocks that depend critically on the passive devices, the voltage-controlled oscillator and a distributed amplifier. It should be of interest to RF and microwave integrated circuit engineers, computer aided designers, device physicists, and electromagnetic researchers, as well as power electronics engineers.

Contenuti

List of Figures. List of Tables. Preface. Acknowledgments. Part I: Analysis and Simulation of Passive Devices. 1. Introduction. 2. Problem Description. 3. Previous Work. 4. Electromagnetic Formulation. 5. Inductance Calculations. 6. Calculation of Eddy Current Losses. 7. Asitic. 8. Experimental Study. Part II: Applications of Passive Devices. 9. Voltage Controlled Oscillators. 10. Distributed Amplifiers. 11. Conclusion. Appendices.