ESSDERC '89 : 19th European Solid State Device Research Conference, Berlin

Anton Heuberger

ISBN 10: 3642523161 / ISBN 13: 9783642523168

Editore: Springer, 2012

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Druck auf Anfrage Neuware - Printed after ordering - The conference ESSDERC '89 held in September 1989 in Berlin was concerned with the physics, electrical characteristics, reliability and processing of solid state devices and electronic materials. The proceedings contain all invited and contributed papers of the conference and thus becomes a state-of-the-art-report of solid state device research in Europe 1989.

Codice articolo 9783642523168

Dati bibliografici

• Titolo: ESSDERC '89 : 19th European Solid State Device Research Conference, Berlin
• Editore: Springer
• Data di pubblicazione: 2012
• Lingua: Inglese
• ISBN 10: 3642523161
• ISBN 13: 9783642523168
• Rilegatura: Taschenbuch
• Condizione: Neu
• Dimensioni: 235 L x 155 A x 53 P (millimetri) 235 millimetri di larghezza per 155 millimetri di altezza per 53 millimetri di profondità
• Peso: 1475 grammi

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Riassunto

The conference ESSDERC '89 held in September 1989 in Berlin was concerned with the physics, electrical characteristics, reliability and processing of solid state devices and electronic materials. The proceedings contain all invited and contributed papers of the conference and thus becomes a state-of-the-art-report of solid state device research in Europe 1989.

Contenuti

GaAs electronic devices.- Deep submicron dry etching.- Characterization of hot carrier trapping in the gate oxide of MOSFETs.- The use of boron doped polysilicon in PMOS devices.- Semiconductor device fabrication with high energy ion implantation.- A self-aligned gate definition process with sub-micron gaps.- Novel submicron processes for shallow p+-n junctions.- Enhanced process window for BPSG flow in a salicide process using an LPCVD nitride cap layer.- Silicon oxidation rate dependence on dopant pile-up.- Beryllium and manganese diffusion in Ga0.47In0.53As during MBE-growth.- Quality and applications of In(Ga)AIAs-layers.- On the high-frequency behaviour of ohmic contacts.- Assessment of semi-insulating InP:Fe layers for substrate applications.- Investigation on p-buried GaAs MESFETs.- An InGaAs/GaAs strained superlattice MSM photodiode for fast light detection at 1.3?m.- Scaling-down of submicrometer GaAs MESFETs.- The mobility model in MINIMOS.- MESFET analysis with MINIMOS.- Numerical analysis of breakdown in silicon diodes.- A new algorithm to accelerate convergence in the simulation of semiconductor devices.- Narrow-width effects in submicron MOS ICs.- Simulation of parasitic currents and other effects in narrow channel devices.- 3D simulation of parasitic effects in EPROM cells.- Requirements for device and process modelling of submicron devices.- Geometry dependent bird’s beak formation for submicron LOCOS isolation.- Combination of LOCOS and BOX isolation for submicron CMOS technology.- Impact of oxide thinning at the LOCOS edge of MOS capacitors on constant current stress.- A self-aligned isolation oxide process before gate formation for enhanced packing density of megabit DRAMs.- Field isolation using shallow trenches for submicron CMOStechnology.- High performance submicron SILO process for high density EPROM memories using rapid thermal nitridation of silicon.- High speed BICMOS technology with emitter-base self-aligned structure.- Ohmic contacts to n-type GaAs using GeMoW metallization for self aligned processing.- Reliable, high temperature stable Schottky contacts to GaAs based on LaB6 diffusion barriers.- GaAs/InAs heterostructures grown by atomic layer epitaxy.- High temperature LPCVD of dielectrics on III–V substrates for device application.- Short-time diffusion of zinc into InP and InGaAsP from spin-on films.- Schottky barrier enhanœment on InP using pseudomorphic GaInP MBE layers.- Control of the Si3N4 InGaAs interfaces by constant capacitance transients.- Simulation of ion implantation into multilayer structures.- Simulation of the lateral spread of implanted ions: experiments.- The modeling and simulation of reactive ion etching rate using statistical method.- Two-dimensional aspects of ion enhanced reactive etching of silicon with SF6.- A yield modelling system for NMOS and CMOS IC.- Calculation of bipolar transistor base resistance using finite element method.- Efficient integration of device and circuit simulation.- Dopant activation and defect annihilation of heavily doped arsenic implanted silicon layers.- Self-aligned CoSi2 in a submicron CMOS process.- Reduction of titanium silicide degradation during boro-phosphosilicate glass reflow.- Shallow junctions fabrication by using molibdenum silicide and rapid thermal annealing.- A study of ultra shallow junctions by diffusion from self-aligned silicides.- The outdiffusion of boron and arsenic from pre-formed cobalt disilicide layers.- Ion-beam mixed MoSi2 layers: formation and contact properties.- An investigation into the parasitic effects affecting the operation of HEMT-based ICs.- Automated measurement of the bias dependence of low frequency small-signal parameter dispersions in GaAs MESFETs.- High speed Ga0.47In0.53As MISFETs grown by metal organic vapor phase epitaxy.- A resonant tunneling high electron mobility transistor.- Implanted-collector InGaAsP/InP heterojunction bipolar transistor.- 0.25 ?m all level e-beam pseudomorphic AIGaAs/lnGaAs MODFET with ft over 65 GHz.- Phase noise in HBT oscillator (abstract).- The influence of point defect concentrations on the diffusion of gold in silicon.- Quantification of diffusion mechanisms of boron, phosphorus, arsenic and antimony in silicon.- A consistent pair-diffusion based steady-state model for phosphorus diffusion.- Numerical simulation of gas flow and temperature in a diffusion furnace.- The impact of metal contamination on the quality of thermal SiO2.- A novel approach to realistic worst-case simulations of CMOS circuits.- Self-consistent modelling of npn and pnp transistors.- Technological challenge of artificial neural networks.- Progress in optoelectronic ICs.- The effect of rapid thermal annealing on the quality of thin thermal oxides.- Charge trapping in dry and pyrogenic gate oxides.- IC process compatible preparation of silicon interfaces using the silicon-to-silicon direct bonding method.- Electrical properties of ultra thin multilayer dielectrics on polysilicon.- Gate oxide reliability in a sealed interface local oxidation scheme.- Interface properties and channel mobility of plasma nitrided devices.- Influence of cleaning on SiO2 growth.- Assessment of pulse-to-pulse timing jitter in periodically gain-switched semiconductor lasers.- Monolithic Pb1-xSnxSe on Si infrared sensor array for the 8–12 ?m range.- InP based integrated laser driver circuit.- High-sensitivity, polysilicon-emitter phototransistors.- Ga0.96Al0.04Sb implanted avalanche photo-diode; perspective for a 2.55 ?m SAM APD photo detector.- Crack formation and selective growth in MOVPE-GaAs on Si and its application to OEICs.- Integration of GaAs LEDs on Si by epi-lift-off.- Submicron CMOS circuit simulation model accurate from liquid nitrogen to room temperature.- A new methodology to build-up accurate empirical models for VLSI MOSFETs.- Compact modelling of the MOSFET drain conductance.- A new analytical model of CMOS latch-up.- Physical modelling of bipolar mode field effect transistor (BMFET) for circuit simulation.- An analytical model for the vertical insulated gate bipolar transistor.- Effect of velocity saturation on small signal behaviour of submicron MOSFETs: analytical modelling and 2-D simulations.- Chemical sensors.- Fabrication and characterisation of pnp polysilicon emitter bipolar transistors.- BICMOSG3 cell — a novel high-speed DRAM cell taking full advantage of BICMOS technology.- 1.2 ?m BICMOS technology for mixed analog-digital applications.- Study of a polycide (WSi2/polysilicon) emitter for a CMOS compatible self-aligned bipolar transistor.- Physical analysis of peripheral base currents in an advanced polysilicon self-aligned bipolar transistor structure.- Sidewall contact for npn/pnp transistors by selective oxidation (SELOX).- A 10 GHz high performance BICMOS technology for mixed CMOS/ECL ICs.- Capacitance-voltage investigation of rechargeable traps in isotype laser heterojunctions.- Optical properties of GaInAs/InP multi-quantum wells grown by low pressure MOVPE.- Technology and characterization of a photoconductive device on InP.- MOMBE growth of GaInAs/InP structures: Quantum wells and selective epitaxy.- Coupling induced enhancement of interface recombination in GaAs multiple quantum well structures.- Scanning photoluminescence assessment MOCVD InGaAs/InP lattice mismatched heterostructures during the fabrication of photodiode arrays.- Investigation of GaAs/AlGaAs quantum well lasers by micro Raman spectroscopy.- Optimizing the epilayer doping concentration with respect to bipolar transistor performance in a low-power UHF-process.- An 1 GHz all-implanted vertical pnp transistor.- High voltage IC with vertical current flow and junction isolation.- Characterisation and performance of short-channel polysilicon thin-film transistors.- Analysis of the specific ON-resistance in conventional VDMOS transistors.- CMOS-compatible high-voltage complementary LDMOS devices.- Analysis of the modifications induced by electron irradiation on the electrical characteristics of high power GTOs.- Influence of top oxide thickness on electrical properties of ONO stacked insulators.- Electrical and optical spectroscopic characterization of oxide traps induced by hot hole injection.- Well technologies for half-micron CMOS processes.- An investigation into the effects of RTA processing on low frequency noise and other characteristics of CMOS FETs.- Avoiding lateral diffusion of dopants in n+/p+ polycide gates.- Electrical properties and sputter-etched induced defects in Ti-W/Si Schottky diodes.- Si/Si0.8Ge0.2 heterojunction bipolar transistors with ion implanted device contacts.- Cryoelectronic application of a hybrid device concept based on semiconducting and superconducting components.- Si permeable based transistor realization using a MOS compatible technology.- Enhanced transconductance in deep submicron MOSFET.- A planar reach-through p+np+ device for the detection of surface acoustic waves.- A monolithic integrated balanced mixer circuit for 9 to 12 GHz.- High temperature superconducting ceramic RF SQUID (abstract).- A monolithic integrated active thin film head for magnetic recording — an example for a combination technology suitable for smart sensors.- The effect of the metal, interface and semiconductor parameters on the electrical behaviour of Schottky junctions.- A new silicon diaphragm pressure sensor and its stress analysis.- A distribution function of injected electrons in the planar doped barrier transistors.- Dependence on gate length of electrical properties of self-aligned AlGaAs/GaAs HEMTs studied by Monte Carlo technique.- Frequency dependent CV measurements of GaAs/AlGaAs heterostructures.- Nuclear reaction analysis of electronic materials — part II: instability analysis of a Si:H solar cell materials.- Miniaturized accelerometers based on silicon micromachining techniques.- Sub-0.1 ?m silicon MOSFETs.- A TiN/TiSi2 interconnect structure durable for high temperature processing.- Formation of reliable Al-Si/Si contacts by chemical oxidation of the contact area.- The influence of tungsten contact filling on junction quality and contact resistance.- AlSi/Ti/AlSi multisandwich systems on TiN/Ti for VLSI i...