FinFETs and Other Multi-Gate Transistors (Integrated Circuits and Systems)

ISBN 10: 1441944095 / ISBN 13: 9781441944092

Editore: Springer, 2010

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Dati bibliografici

• Titolo: FinFETs and Other Multi-Gate Transistors (Integrated Circuits and Systems)
• Editore: Springer
• Data di pubblicazione: 2010
• Lingua: Inglese
• ISBN 10: 1441944095
• ISBN 13: 9781441944092
• Rilegatura: Brossura
• Condizione: New

Descrizione articolo

Riassunto

This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects and novel electrical transport phenomena due to the reduced size of the devices. In addition, this book describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs. It includes descriptions of the technological challenges and options, including a physically based compact model, that are presented by these devices. It also describes the most advanced models of MuGFET properties based on quantum modeling as well as other MuGFET applications that include advanced circuits and radiation-hard electronic devices.

Dalla quarta di copertina

<p><em>FinFETs and Other Multi-Gate Transistors</em> provides a comprehensive description of the physics, technology and circuit applications of multigate field-effect transistors (FETs). It explains the physics and properties of these devices, how they are fabricated and how circuit designers can use them to improve the performances of integrated circuits. </p><p></p><p>The International Technology Roadmap for Semiconductors (ITRS) recognizes the importance of these devices and places them in the "Advanced non-classical CMOS devices" category. Of all the existing multigate devices, the FinFET is the most widely known.</p><p></p><p><em>FinFETs and Other Multi-Gate Transistors</em> is dedicated to the different facets of multigate FET technology and is written by leading experts in the field.</p>