Formation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses

Tae-Ho Lee

ISBN 10: 9811347883 / ISBN 13: 9789811347887

Editore: Springer, 2018

Formation of KNbO3 Thin Films for Self-Powered ReRAM Devices and Artificial Synapses | Tae-Ho Lee | Taschenbuch | Springer Theses | xxi | Englisch | 2018 | Springer | EAN 9789811347887 | Verantwortliche Person für die EU: Springer Verlag GmbH, Tiergartenstr. 17, 69121 Heidelberg, juergen[dot]hartmann[at]springer[dot]com | Anbieter: preigu. Codice articolo 115285154

Riassunto:

This thesis describes an investigation into homogeneous KN crystalline films grown on Pt/Ti/SiO2/Si substrates, amorphous KN films grown on TiN/Si substrates using the RF-sputtering method, and the ferroelectic and piezoelectric properties of these KN films. KNbO3 (KN) thin films have been extensively investigated for applications in nonlinear optical, electro-optical and piezoelectric devices.  However, the electrical properties of KN films have not yet been reported, because it is difficult to grow stoichiometric KN thin films due to K2O evaporation during growth.

This thesis also reports on the ReRAM properties of a biocompatible KN ReRAM memristor powered by the KN nanogenerator, and finally shows the biological synaptic properties of the KN memristor for application to the artificial synapse of a neuromorphic computing system.

Informazioni sull?autore:

Dr. Tae-Ho Lee received his Ph.D (2017) from department of Materials Science and Engineering, Korea University and is currently working in Korea Electronics Technology Institute.

Dati bibliografici

Titolo: Formation of KNbO3 Thin Films for ...
Casa editrice: Springer
Data di pubblicazione: 2018
Legatura: Taschenbuch
Condizione: Neu