GaAs Devices and Circuits

Michael S. Shur

ISBN 10: 0306421925 / ISBN 13: 9780306421921

Editore: Springer US, Springer New York, 1987

Riguardo questo articolo

Druck auf Anfrage Neuware - Printed after ordering - GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Codice articolo 9780306421921

Dati bibliografici

• Titolo: GaAs Devices and Circuits
• Editore: Springer US, Springer New York
• Data di pubblicazione: 1987
• Lingua: Inglese
• ISBN 10: 0306421925
• ISBN 13: 9780306421921
• Rilegatura: Buch
• Condizione: Neu
• Dimensioni: 286 L x 215 A x 42 P (millimetri) 286 millimetri di larghezza per 215 millimetri di altezza per 42 millimetri di profondità
• Peso: 1909 grammi

Descrizione articolo

Riassunto

GaAs devices and integrated circuits have emerged as leading contenders for ultra-high-speed applications. This book is intended to be a reference for a rapidly growing GaAs community of researchers and graduate students. It was written over several years and parts of it were used for courses on GaAs devices and integrated circuits and on heterojunction GaAs devices developed and taught at the University of Minnesota. Many people helped me in writing this book. I would like to express my deep gratitude to Professor Lester Eastman of Cornell University, whose ideas and thoughts inspired me and helped to determine the direction of my research work for many years. I also benefited from numerous discussions with his students and associates and from the very atmosphere of the pursuit of excellence which exists in his group. I would like to thank my former and present co-workers and colleagues-Drs. Levinstein and Gelmont of the A. F. Ioffe Institute of Physics and Technology, Professor Melvin Shaw of Wayne State University, Dr. Kastalsky of Bell Communi­ cations, Professor Gary Robinson of Colorado State University, Professor Tony Valois, and Dr. Tim Drummond of Sandia Labs-for their contributions to our joint research and for valuable discussions. My special thanks to Professor Morko.;, for his help, his ideas, and the example set by his pioneering work. Since 1978 I have been working with engineers from Honeywell, Inc.-Drs.

Contenuti

1. Chemical Bonds and Crystal Structure.- 2. Band Structure and Transport Properties.- 3. GaAs Technology.- 4. Ridley-Watkins-Hilsum-Gunn Effect.- 5. Transferred Electron Oscillators.- 6. Transferred Electron Amplifiers and Logic and Functional Devices.- 7. GaAs FETs: Device Physics and Modeling.- 8. GaAs FET Amplifiers and Microwave Monolithic Integrated Circuits.- 9. GaAs Digital Integrated Circuits.- 10. Modulation Doped Field Effect Transistors.- 11. Novel GaAs Devices.- New developments and Recent References.- Appendixes.- A. Some Room-Temperature (300K) Properties of GaAs.- B. Microwave Bands.