Gallium Nitride and Related Materials: Device Processing and Materials Characterization for Power Electronics Applications

Kizilyalli, Isik C. (Editor)/ Han, Jung (Editor)/ Speck, James S. (Editor)/ Carlson, Eric P. (Editor)

ISBN 10: 3031830555 / ISBN 13: 9783031830556

Editore: Springer Nature, 2025

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715 pages. 9.25x6.10x9.21 inches. In Stock.

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• Titolo: Gallium Nitride and Related Materials: Device Processing and Materials Characterization for Power Electronics Applications
• Editore: Springer Nature
• Data di pubblicazione: 2025
• Lingua: Inglese
• ISBN 10: 3031830555
• ISBN 13: 9783031830556
• Rilegatura: Hardcover
• Condizione: Brand New
• Peso: 1,17 chilogrammi

Descrizione articolo

Riassunto

This book presents progress in device processing and materials characterization of the wide-bandgap semiconductor gallium nitride (GaN) and related materials for power electronics applications. The content of the book is based on the output of multiple well defined and actively managed programs from the U.S. Department of Energy’s Advanced Research Projects Agency-Energy (ARPA-E). The material is organized into eight parts with a total of 28 chapters contributed from invited experts that were part of the ARPA-E programs along with chapters from a few select experts from around the world who are actively engaged in GaN and related WBG semiconductor research and development.

The book includes an overview of GaN power electronic devices and systems and a comprehensive review of the key vertical device processing challenges (Part I), detailed descriptions of bulk GaN substrate technology (Part II), discussions of the challenges in GaN epitaxial growth and processing (Part III), an in-depth examination of approaches and challenges in GaN selective area p-type doping with an eye towards mechanistic understanding (Part IV), an overview of innovative material characterization techniques developed to understand the device processing challenges (Part V), an analysis of the fundamental materials properties of GaN in relation to its use in power electronics (Part VI), a discussion of related earlier stage nitride wide bandgap materials development and application in power electronics and other applications (Part VII), and concludes with a forward-looking discussion of the areas that still need research and development to push the limits of power electronics to utilize wide bandgap semiconductors along with potential high impact application areas (Part VIII).

This book is intended to be an essential reference for anyone working in either basic research or advanced development of vertical architecture GaN power electronics and technologies. It is anticipated this book will become a go-to reference for any scientist and engineer working in any nitride semiconductor material seeking an updated coverage of the state-of-the-art processing and characterization techniques that will push GaN know-how to new materials and device frontiers.

Informazioni sull?autore

Isik C. Kizilyalli recently served as the Senior Director of Technology (R&D) Sustainability Accelerator within the Stanford Doerr School of Sustainability. Prior to joining the Accelerator, he was the Associate Director for Technology at the Advanced Research Projects Agency – Energy (ARPA-E). In this role, Dr. Kizilyalli oversaw all technology issues relating to ARPA-E’s programs, program development, Program Director and Fellow recruitment, and coordinating project management across the Agency. As an ARPA-E Program Director his focus included power electronics, semiconductor devices, electrification of transportation (aviation, ships, automotive, space) and associated infrastructure, enhanced geothermal systems, subsurface instrumentation and drilling, electric distribution and transmission grids, and grid technologies and resiliency against aging, EMP, space weather, natural disaster, and cyber threats. Before joining ARPA-E, Dr. Kizilyalli served as founder and CEO/CTO of Avogy Inc. and Zolt Inc., venture backed start-ups focused on power electronics. At the 2015 International Consumer Electronics Show (CES) Zolt Inc. was a CES Best of Innovation Awards Honoree, Best Startup CES finalist (by Engadget), a Top Tech of CES nominee (by Digital Trends), and a Top Pick CES (by Laptop Magazine). Previously, he was with AT&T Bell Laboratories and its spinouts for nearly 17 years, followed by Nitronex Corporation, and solar PV startup Alta Devices where his team holds the world record for single junction solar cell conversion efficiency. Dr. Kizilyalli was elected a Fellow of the Institute of Electrical and Electronics Engineers (IEEE) in 2007 for his contributions to "Integrated Circuit Technology". He also received the Bell Laboratories’ Distinguished Member of Technical Staff award and the Best Paper Award at the International Symposium on Power Semiconductors and Integrated Circuits (ISPSD) in 2013. Dr. Kizilyalli holds his B.S. in Electrical Engineering, M.S. in Metallurgy, and Ph.D. in Electrical Engineering all from the University of Illinois (Urbana). He has published a Springer-Nature book on Direct Current Fault Protection, more than 100 papers and holds 127 issued U.S. patents.

 

Jung Han is the William Norton Professor in Technological Innovation and the Chair of Electrical and Computer Engineering at Yale University. His research interests include wide-bandgap semiconductor epitaxy, optoelectronic and microelectronic devices, semiconductor nanotechnology, lasers, VCSELs, and micro-LEDs. He has published more than 380 papers in peer-reviewed journals, and has served as editor of six books and special journal issues. He holds more than 20 U.S. patents and is the co-founder of three startup companies, Saphlux, Ganvix, and InPhred. Prof. Han has received numerous awards including an Department of Commerce R&D 100 Award, MRS Ribbon Award, and EMC Best Paper Award, EPD Award from the Electrochemical Society, and Yale’s faculty Innovator Award. He is a member of the Connecticut Academy of Science and Engineering, and a fellow of the Institute of Physics, Institute of Electrical and Electronic Engineers, OPTICA, and National Academy of Inventors. Prior to joining Yale in 2001, Prof. Han was a senior technical staff member at Sandia National Laboratories where he pioneered the growth of AlGaN for UV emitters and the use of in-situ diagnostics during crystal growth, the latter has since been adopted worldwide by the LED industry. Prof. Han graduated from National Taiwan University in 1986, and earned his M.S. and Ph.D. in electrical engineering from Purdue University in 1990 and 1992, respectively.

 

James S. Speck is a Professor in theMaterials Department at the University of California Santa Barbara. At UCSB, his early work focused on epitaxial oxide films on semiconductors, ferroelectric thin films, and strain relaxation in highly misfitting epitaxial systems. He has worked extensively on the materials science of GaN and related alloys. Major aspects of his work on nitrides include elucidating basic growth modes and defect generation, the development of MBE growth of GaN, and the development of nonpolar and semipolar GaN. Prof. Speck received the Quantum Device Award with Umesh Mishra from the International Symposium on Compound Semiconductors in 2007, he was named an inaugural MRS Fellow in 2008, and received the JJAP Best Paper Award in 2008. In 2009 he received became an APS Fellow. In 2010 he received the IEEE Photonics Society Aron Kressel Award with Steve DenBaars for their work on nonpolar and semipolar GaN-based materials and devices. In 2007, Prof. Speck and his longtime collaborators Steve DenBaars and Shuji Nakamura founded Santa Barbara-based start-up companies Kaai and Soraa to commercialize their work on nonpolar and semipolar nitrides. In 2016 he was elected as a Fellow of the National Academy of Inventors. Prof. Speck has over 950 publications in the referred archival literature. He received his B.S.M.E. degree in metallurgical engineering from the University of Michigan in 1983 and his S.M. and Sc.D. in materials science from the Massachusetts Institute of Technology in 1985 and 1989, respectively.

 

Eric P. Carlson is currently a Senior Lead Scientist at Booz Allen Hamilton where he supports the DOE’s Advanced Research Projects Agency-Energy (ARPA-E) as a technical support contractor. Prior to joining Booz Allen Hamilton, he served 12 years as a Research Specialist in the Compound Semiconductor Solutions Division at Dow Corning Corporation where he developed crystal growth, epitaxy, and characterization of wide band gap semiconductor materials. Before joining Dow Corning Corporation, Dr. Carlson served as the Director of GaN R&D at Kyma Technologies where he was developing bulk GaN wafers. Dr. Carlson is the author and co-author of more than 50 scientific publications and holds 6 patents. He received his B.S. and Ph.D. in materials science and engineering from North Carolina State University in 1993 and 2001, respectively.