Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion

Gaudenzio Meneghesso

ISBN 10: 3319779931 / ISBN 13: 9783319779935

Editore: Springer International Publishing, Springer Nature Switzerland Mai 2018, 2018

Riguardo questo articolo

This item is printed on demand - it takes 3-4 days longer - Neuware -This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency andlower cost power conversion;Enables design of smaller, cheaper and more efficient power supplies. 248 pp. Englisch.

Codice articolo 9783319779935

Dati bibliografici

• Titolo: Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion
• Editore: Springer International Publishing, Springer Nature Switzerland Mai 2018
• Data di pubblicazione: 2018
• Lingua: Inglese
• ISBN 10: 3319779931
• ISBN 13: 9783319779935
• Rilegatura: Buch
• Condizione: Neu
• Dimensioni: 241 L x 160 A x 20 P (millimetri) 241 millimetri di larghezza per 160 millimetri di altezza per 20 millimetri di profondità
• Peso: 541 grammi

Descrizione articolo

Riassunto

This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion.

• Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers;
  
• Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion;
  
• Enables design of smaller, cheaper and more efficient power supplies.
  

Informazioni sull'autore

Gaudenzio Meneghesso is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. 

Matteo Meneghini is researcher at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices. 

Enrico Zanoni is full professor at the University of Padova, Department of Information engineering. His research interests involve electrical characterization, modeling and reliability of semiconductors devices.