Germanium-Silicon Strained Layers and Heterostructures: Supplement 24

ISBN 10: 0120145987 / ISBN 13: 9780120145980

Editore: Academic Press, 1994

This is a Brand-new US Edition. This Item may be shipped from US or any other country as we have multiple locations worldwide. Codice articolo ABBB-100330

Riassunto:

Biaxial strain in coherent GeSi layers grown on Si substrates provides a powerful tool for tailoring bandgaps and band offsets. Extremely high electron and hole mobilities have been obtained in modulation-doped GeSistrained layer heterostructures. Ultra-high-speed Heterojunction Bipolar Transistors and MODFETs and long wavelength (1 to 20 um) IR Detectors have been fabricated using these layers. Quantum wells, ultra-thin period superlattices, and quantum dots can also be fabricated using the strained layers. These devices were previously implemented using III-V semiconductors. Now they can be fabricated using existing Si technology, which is mature and reliable. GeSi strained layer technology has made it possible tomanufacture monolithic Si integrated circuits containing heterojunction devices. Jains monograph, the first of its kind, covers the fundamental physics of strained layers, theory, design, and characteristics of the GeSi heterostructure devices.

Dati bibliografici

Titolo: Germanium-Silicon Strained Layers and ...
Casa editrice: Academic Press
Data di pubblicazione: 1994
Legatura: Rilegato
Condizione: New