Hierarchical Device Simulation: The Monte-Carlo Perspective (Computational Microelectronics)

Jungemann, Christoph, Meinerzhagen, Bernd

ISBN 10: 3709172268 / ISBN 13: 9783709172261

Editore: Springer, 2012

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Dati bibliografici

• Titolo: Hierarchical Device Simulation: The Monte-Carlo Perspective (Computational Microelectronics)
• Editore: Springer
• Data di pubblicazione: 2012
• Lingua: Inglese
• ISBN 10: 3709172268
• ISBN 13: 9783709172261
• Rilegatura: Paperback
• Condizione: Like New
• Tipo di libro: book

Descrizione articolo

Riassunto

This book summarizes the research of more than a decade. Its early motivation dates back to the eighties and to the memorable talks Dr. C. Moglestue (FHG Freiburg) gave on his Monte-Carlo solutions of the Boltzmann transport equation at the NASECODE conferences in Ireland. At that time numerical semiconductor device modeling basically implied the application of the drift-diffusion model. On the one hand, those talks clearly showed the potential of the Monte-Carlo model for an accurate description of many important transport issues that cannot adequately be addressed by the drift-diffusion approximation. On the other hand, they also clearly demonstrated that at that time only very few experts were able to extract useful results from a Monte-Carlo simulator. With this background, Monte-Carlo research activities were started in 1986 at the University of Aachen (RWTH Aachen), Germany. Different to many other Monte-Carlo research groups, the Monte-Carlo research in Aachen took place in an environment of active drift-diffusion and hydrodynamic model development.

Contenuti

Introduction References Semiclassical Transport Theory The Boltzmann Transport Equation • Balance Equations • The Microscopic Relaxation Time • Fluctuations in the Steady-State • References The Monte-Carlo Method Basic Monte-Carlo Methods • The Monte-Carlo Solver of the Boltzmann Equation • Velocity Autocorrelation Function • Basic Statistics • Convergence Estimation • References Scattering Mechanisms Phonon Scattering • Alloy Scattering • Impurity Scattering • Impact Ionization by Electrons • Surface Roughness Scattering • References Full-Band Structure Basic Properties of the Band Structure of Relaxed Silicon • Basic Properties of the Band Structure of Strained SiGe • k-Space Grid • Calculation of the Density of States • Mass Tensor Evaluation • Particle Motion in Phase-Space • Selection of a Final State in k-Space • References Device Simulation Device Discretization • Band Edges • Poisson Equation • Self-Consistent Device Simulation • Nonlinear Poisson Equation • Nonself-Consistent Device Simulation • Statistical Enhancement • Terminal Current Estimation • Contact Resistance • Normalization of Physical Quantities • References Momentum-Based Transport Models The Hydrodynamic Model • Small-Signal Analysis • Noise Analysis • The Drift-Diffusion Model • Transport and Noise Parameter Simulation • References Stochastic Properties of Monte-Carlo Device Simulations Stochastic Error • In-Advance CPU Time Estimation • References Results N+ NN+ and P+ PP+ Structures • MOSFETs • SiGe HBTs Subject Index