Microscopy of Semiconducting Materials : Proceedings of the 14th Conference, April 11-14, 2005, Oxford, UK. Questo articolo non è disponibile.
Lingua: inglese
Editore: Springer, Berlin, Springer, 2006
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- Nuovo

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Descrizione dell’articolo da parte del venditore
Neuware - Epitaxy: Wide Band-Gap Nitrides.- Epitaxy: Silicon-Germanium Alloys.- Epitaxy: Growth and Defect Phenomena.- High Resolution Microscopy and Nanoanalysis.- Self-Organised and Quantum Domain Structures.- Processed Silicon and Other Device Materials.- Device Studies.- Scanning Electron and Scanning Probe Advances.
Codice articolo 9783540319146
- Titolo
- Microscopy of Semiconducting Materials : Proceedings of the 14th Conference, April 11-14, 2005, Oxford, UK
- Autore
- A.G. Cullis
- Editore
- Springer, Berlin, Springer
- Anno di pubblicazione
- 2006
- Condizione
- Neu
- Rilegatura
- Buch
- Lingua
- inglese
- ISBN 10
- 354031914X
- ISBN 13
- 9783540319146
- Peso dell'articolo
- 992 grammi
- Dimensioni
- 241x160x35 mm
- Serie
- Libro 13 di 166: Springer Proceedings in Physics
The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction.
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Dalla quarta di copertina
This is a long-established international biennial conference series, organised in conjunction with the Royal Microscopical Society, Oxford, the Institute of Physics, London and the Materials Research Society, USA. The 14th conference in the series focused on the most recent advances in the study of the structural and electronic properties of semiconducting materials by the application of transmission and scanning electron microscopy. The latest developments in the use of other important microcharacterisation techniques were also covered and included the latest work using scanning probe microscopy and also X-ray topography and diffraction. Developments in materials science and technology covering the complete range of elemental and compound semiconductors are described in this volume.
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