Microwave Field-Effect Transistors: Theory, Design, and Applications

Raymond S. Pengelly

ISBN 10: 1884932509 / ISBN 13: 9781884932502

Editore: Noble Pub, 1995

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3rd edition. 687 pages. 9.25x6.25x2.00 inches. In Stock.

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Dati bibliografici

• Titolo: Microwave Field-Effect Transistors: Theory, Design, and Applications
• Editore: Noble Pub
• Data di pubblicazione: 1995
• Lingua: Inglese
• ISBN 10: 1884932509
• ISBN 13: 9781884932502
• Rilegatura: Hardcover
• Condizione: Brand New
• Peso: 1,28 chilogrammi

Descrizione articolo

Riassunto

This book covers the use of devices in microwave circuits and includes such topics as semiconductor theory and transistor performance, CAD considerations, intermodulation, noise figure, signal handling, S-parameter mapping, narrow- and broadband techniques, packaging and thermal considerations. Perhaps the most comprehensive text on GaAs FET technology and its practical application. It covers the use of MESFET devices in microwave circuits, such as low-noise amplifiers, mixers, oscillators, power amplifiers, switches and multipliers. This text is a classic reference for all engineers involved in the development of solid state microwave devices.

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