Modeling Nanowire and Double-Gate Junctionless Field-Effect Transistors (Hardcover)

Farzan Jazaeri

ISBN 10: 1107162041 / ISBN 13: 9781107162044

Editore: Cambridge University Press, Cambridge, 2018

Riguardo questo articolo

Hardcover. The first book on the topic, this is a comprehensive introduction to the modeling and design of junctionless field effect transistors (FETs). Beginning with a discussion of the advantages and limitations of the technology, the authors also provide a thorough overview of published analytical models for double-gate and nanowire configurations, before offering a general introduction to the EPFL charge-based model of junctionless FETs. Important features are introduced gradually, including nanowire versus double-gate equivalence, technological design space, junctionless FET performances, short channel effects, transcapacitances, asymmetric operation, thermal noise, interface traps, and the junction FET. Additional features compatible with biosensor applications are also discussed. This is a valuable resource for students and researchers looking to understand more about this new and fast developing field. The first of its kind, this is a detailed introduction to this new and fast-developing field. It covers the design, modeling, and operation of junctionless field effect transistors (FETs), as well as advantages and limitations. It is Ideal for graduate students and researchers working in semiconductor nanotechnology. Shipping may be from our UK warehouse or from our Australian or US warehouses, depending on stock availability. Codice articolo 9781107162044

Dati bibliografici

Titolo: Modeling Nanowire and Double-Gate ...

Casa editrice: Cambridge University Press, Cambridge

Data di pubblicazione: 2018

Legatura: Hardcover

Condizione: new

Descrizione articolo

Riassunto:

A detailed introduction to the design, modeling, and operation of junctionless field effect transistors (FETs), including advantages and limitations.

Informazioni sugli autori:

Farzan Jazaeri is a Scientist at the Ecole Polytechnique Fédérale de Lausanne where his research interests focus on semiconductor devices and physics, and particularly the modeling and fabrication of field-effect transistors.

Jean-Michel Sallese is a Senior Scientist at the Ecole Polytechnique Fédérale de Lausanne. He specialises in the analytical modeling of bulk and multigate field-effect transistors.