Riassunto
The Landolt-Börnstein subvolumes III/44A and III/44B update the existing 8 volumes III/41 about Semiconductors and contain new Data and Updates for I-VII, III-V, III-VI, IV, VI and II-VI Compounds. The text, tables figures and references are provided in self-contained document files, each one dedicated to a substance and property. The first subvolume III/44A contains a "Systematics of Semiconductor Properties", which should help the non-specialist user to understand the meaning of the material parameters. Hyperlinked lists of substances and properties lead directly to the documents and make the electronic version an easy-to-use source of semiconductor data. In the new updates III/44A and III/44B, links to existing material in III/41 or to related documents for a specific substance are also included.
Contenuti
AgBr: heat capacity.- AgBr: thermal conductivity, thermal diffusivity.- AgBr: heat of sublimation.- AgBr: effective masses.- AgBr: lattice constants.- AgBr: lattice constants.- AgBr: mean square relative displacements.- AgBr: bulk moduli, elastic constants.- AgBr: compressibility, bulk modulus.- AgBr: phonon dispersion.- AgBr: Debye-Waller factor.- AgBr: elastic moduli.- AgBr: dielectric function.- AgIxBr1–x: electrical conductivity, thermoelectric power.- AgCl: heat capacity.- AgCl: heat of sublimation.- AgCl: thermal conductivity, thermal diffusivity.- AgCl: band structure, electron density of states.- AgCl: effective masses.- AgCl: energy gaps, density of states.- AgCl: lattice constants.- AgCl: lattice constants.- AgCl: phonon dispersion.- AgCl: bulk moduli, elastic constants.- AgCl: compressibility, bulk modulus.- AgCl: elastic moduli.- AgCl: Debye-Waller factor.- AgCl: dielectric function.- AgCl: impurity g-factors, hyperfine structure constants.- AgF: lattice constants.- AgF: heat of sublimation.- ?-AgI: bulk moduli.- ?-AgI: lattice constants.- ?-AgI: mean square relative displacements.- AgI: phase transitions, p-T phase diagram.- AgI: heat of sublimation.- AgI: lattice constants.- AgI: compressibility, bulk modulus.- AgI: phonon dispersion.- AgI: Debye-Waller factor.- AgI: elastic moduli, mode Grüneisen parameters.- ?-AgI: ion diffusion coefficient.- AlAs: dielectric constant, refractive index.- AlAs: direct and indirect energy gaps.- AlAs: effective mass parameters.- AlAs: electron density of states, energies at symmetry points.- AlAs: energy gaps.- AlGaxAs1–x: heat capacity.- AlGaxAs1–x: linear thermal expansion coefficient.- AlGaxAs1–x: thermal conductivity, thermal diffusivity.- AlxGa1–xAs: crossover composition energy at symmetry points.- AlxGa1–xAs: electron self energy, electron broadening parameter.- AlxGa1–xAs: lattice constant.- AlxGa1–xAs: elastic constants, Poisson ratio.- AlxGa1–xAs: refractive index, dielectric constant.- AlxGayIn1–x–yAs: bond length.- AlxGayIn1–x–yAs: energy gap.- AlxGayIn1–x–yAs: Raman spectra.- AlxGayIn1–x–yAs: hole mobility.- AlxGayIn1–x–yAs: photoluminescence linewidth.- AlxGa1–xAsySb1–y: internal strain parameter.- AlxGa1–xAsySb1–y: thermal conductivity.- AlxGa1–xAsySb1–y: band structure.- AlxGa1–xAsySb1–y: effective mass parameters.- AlxGa1–xAsySb1–y: energy gaps.- AlxGa1–xAsySb1–y: elastic moduli.- AlxGa1–xAsySb1–y: dielectric constant.- AlxGa1–xAsySb1–y: photoluminescence, absorption coefficient.- AlxIn1–xAs: critical point energies.- AlxIn1–xAs: Raman data.- Al1–xMnxAs: crystal structure, lattice parameter.- Al1–xMnxAs: resistance.- Al1–xMnxAs: magnetic phases.- AlAsxSb1–x: thermal conductivity.- AlxGayIn1–x–yP: bond length.- AlxGa1–xP: lattice parameters.- AlxGa1–xP: critical point energies, interband transition energies.- AlxGa1–xP: electron self energy.- AlxGa1–xP: exciton energies.- AlxGa1–xP: bound exciton data.- AlxGa1–xP: photoluminescence spectra.- AlxGa1–xPySb1–y: elastic moduli.- AlxGa1–xPySb1–y: internal strain parameter.- AlxIn1–xPySb1–y: internal strain parameter.- AlxIn1–xPySb1–y: elastic moduli.- BxGa1–xAs: energy gaps, energy at symmetry points.- BxGa1–xAs: lattice parameter.- BxGa1–x–yInyAs: critical point energies.- BxGa1–x–yInyAs: electron effective mass.- BxGa1–x–yInyAs: energy gaps.- GaAs1–xBix: direct energy gap, intraband transition energies.- GaAs1–xBix: energy gaps, critical point energies.- GaAs1–xBix: spin orbit splitting energy.- GaAs1–xBix: spin orbit splitting energy.- BxIn1–xAs: lattice parameter.- Ga1–xCrxAs: crystal structure, lattice parameter.- Ga1–xCrxAs: conductivity, carrier concentration.- Ga1–xCrxAs: Curie temperature, magnetic circular dichroism.- Ga1–xFexAs: crystal structure, lattice parameter.- Ga1–xFexAs: conductivity, magnetoresistance.- Ga1–xFexAs: magnetization.- GaAs: heat capacity.- GaAs: spin-Hall conductivity, transversal spin drift velocity.- GaAs: phonon density of states.- GaAs: Debye temperatures.- GaAs: spin transport data, spin lifetime, spin drift velocity.- GaAs: photoemission data.- GaAs: radiative recombination coefficient.- GaxIn1–xAs: effective Landé g factors.- GaxIn1–xAs: electron effective mass.- GaxIn1–xAs: energy gaps.- GaxIn1–xAs: parameters of k·p models.- GaxIn1–xAs: critical point energies.- GaxIn1–xAs: phonon wave numbers.- GaxIn1–xAs: carrier lifetime.- GaxIn1–xAs: spin transport data.- GaxIn1–xAs: impact ionization rate.- GaxIn1–xAs: dielectric function.- GaxIn1–xAs: Auger recombination coefficient and lifetime.- GaxIn1–xAs: radiative recombination coefficients.- GaxIn1–xAsyP1–y: energy gaps.- GaxIn1–xAsyP1–y: energy gaps.- GaxIn1–xAsyP1–y: Auger recombination coefficient.- GaxIn1–xAsyP1–y: radiative recombination coefficients.- GaxIn1–xPySbzAs1–y–z: band structure, density of states.- GaxIn1–xPySbzAs1–y–z: energy gaps.- GaxIn1–xPySbzAs1–y–z: transverse effective charge, dielectric constants.- GaxIn1–xAsySb1–y: lattice constant.- GaxIn1–xAsySb1–y: thermal conductivity.- GaxIn1–xAsySb1–y: critical point energies.- GaxIn1–xAsySb1–y: energy gaps.- GaxIn1–xAsySb1–y: energy gap.- GaxIn1–xAsySb1–y: absorption coefficient.- GaxIn1–xAsySb1–y: absorption coefficient.- GaxIn1–xAsySb1–y: Auger recombination coefficient, nonradiative lifetime.- GaxIn1–xAsySb1–y: dielectric constant.- GaxIn1–xAsySb1–y: dielectric constant.- GaxIn1–xAsySb1–y: refractive index.- Ga1–xMnxAs: crystal structure, lattice parameter.- Ga1–xMnxAs: band structure, direct energy gap.- Ga1–xMnxAs: spin polarization.- Ga1–xMnxAs: conductivity, resistivity, magnetoresistance, Hall effect.- Ga1–xMnxAs: exchange integrals, Curie temperature, magnetic anisotropy.- Ga1–xMnxAs: magnetic circular dichroism, Verdet constant.- GaAs1–xSbx: direct energy gap, spin orbit splitting energy.- GaAsxSb1–x: energy gaps.- GaAsxSb1–x: photoluminescence.- GaAsxSb1–x: refractive index.- InAs: total energies, phase diagram.- InAs: band structure.- InAs: critical point energies.- InAs: Dresselhaus spin splitting parameter.- InAs: spin orbit splitting energies.- InAs: effective mass parameters.- InAs: energies at symmetry points.- InAs: effective Landé g factors.- InAs: interband transition energies.- InAs: energy gap.- InAs: phonon frequencies.- InAs: mobility.- InAs: electron spin lifetime.- InAs: drift velocity.- InAs: dielectric constant.- InAs: absorption coefficient, reflectivity.- InAs: extinction coefficient, refractive index.- InAs: higher order optical susceptibilities.- In1–xMnxAs: crystal structure, lattice parameter.- In1–xMnxAs: direct gap, effective masses.- In1–xMnxAs: conductivity, magnetoresistance, Hall resistivity.- In1–xMnxAs: carrier concentration, mobility.- In1–xMnxAs: magnetic circular dichroism.- In1–xMnxAs: magnetic phases, exchange integrals, Curie temperature, magnetic anisotropy-->In1–xMnxAs: magnetic phases, exchange integrals, Curie temperature, magnetic anisotropy.- InAsxSb1–x: critical point energies, broadening parameters.- InAsxSb1–x: energy gaps.- InxAs1–xSb: transverse effective charge.- InAsxSb1–x: sound velocities.- InAsxSb1–x: elastic moduli.- InAsxSb1–x: dielectric constant.- InBixSb1–x: transverse effective charge.- CuCl1–xBrx: phonon wavenumbers.- CuCl1–xBrx: electron mobility, drift velocity.- CuBr: p-T phase diagram, transition pressure.- CuBr: interionic distance.- CuBr: heat of sublimation.- ?-CuBr: biexciton and trion data.- ?-CuBr: deformation potentials.- ?-CuBr: energy gaps, exciton energies in dependence on temperature.- CuBr: elastic moduli, effective charges.- CuBr: Grüneisen parameters.- CuBr: phonon wavenumbers, damping constants, Grüneisen parameters.- CuBr: phonon dispersion curves, phonon density of states.- CuBr: lattice constants.- ?-CuBr: mean square relative displacements.- CuBr: bulk modulus.- ?-CuBr: ion transport properties.- ?-CuBr: electron mobility, drift velocity.- ?-CuBr: dielectric constants.- Hg1–x–y–zCdxMnyZnzTe: energy gap.- Hg1–x–y–zCdxMnyZnzTe: micro hardness.- Hg1–x–y–zCdxMnyZnzTe: intrinsic carrier concentration, conductivity, Hall coefficient, mobility.- Hg1–x–y–zCdxMnyZnzTe: activation energy.- Hg1–xCdxTe: activation energy.- Hg1–xCdxTe: mobility, carrier concentration.- Hg1-xCdxTe: free-carrier absorption.- Hg1–xCdxTe: luminescence, reflectance, absorption, and refractive index.- Hg1-xCdxTe: reflectance.- Hg1-xCdxTe: two-photon absorption constant.- CdO: band structure, density of states.- CdO: energy gaps.- CdO: mean inner potential.- CdO: photoconductivity, resistivity.- Zn1–xCdxO: energy gaps, dependence on temperature.- Zn1–xCdxO: resistivity.- CdS: phase transition, transition pressure.- CdS: exciton energies, exciton binding energies.- CdS: bound excitons.- CdS: defect formation energies.- CdS: resistivity.- CdS: conductivity, mobility.- CdSe: phase transition, transition pressure.- CdSe: energy gaps.- CdSe: dielectric constants.- CdSe: higher order optical susceptibilities.- Sn1–xCdxTe: hardness.- ZnxCd1–xS: energy gaps.- Cd1–xZnxS: resistivity.- CdTe: density of states.- CdTe: energy gaps, temperature dependence.- CdTe: band structure.- CdTe: impurity complexes.- CdTe: impurity complexes.- CdTe: ionization energies.- CdTe: ionization energies.- CdTe: bound excitons.- CdTe: donor-acceptor pairs, free-to-bound transitions.- CdTe: emission energies.- CdTe: bound excitons.- CdTe: Hall mobility.- CdTe: mobility.- CdTe: resistivity.- CdTe: conductivity, resistivity.- CdTe: dielectric constants.- CdTe: higher order optical susceptibilities.- Cd1–xZnxTe: enthalpy.- Cd1–xZnxTe: energy gaps.- Cd1–xZnxTe: donor acceptor pairs.- Cd1–xZnxTe: ionization energies.- Cd1–xZnxTe: resistivity, mobilities, Hall coefficient.- ?-CuCl: exciton energies.- ?-CuCl: phonon wavenumbers.- CuCl: mean square relative displacements.- CuCl: phonon dispersion.- CuCl: elastic moduli.- SiC: valence band offsets.- SiC: spontaneous polarization.- SiC: absorption coefficient.- SiC: Auger recombination coefficient.- SiC: exciton gap.- ?-SiC: nonlinear optical coefficients.- SiC: refractive index.- CuF: heat of sublimation.- CuF: lattice constants.- CuI: phase transitions, p-T phase diagram.- CuI: heat of sublimation.- ?-CuI: biexciton and trion data.- ?-CuI: exciton energies.- CuI: force constants, elastic moduli, effective charges.- CuI: bulk modulus.- CuI: phonon dispersion.- ?-CuI: phonon wavenumbers.- CuI: lattice parameters.- CuI: mode Grüneisen parameters.- ?-CuI: mean square displacement.- CuI: ion diffusion coefficient.- ?-CuI: electron mobility, drift velocity.- GaxIn1–xP: elastic moduli.- GaxIn1–xP: transverse effective charge.- Ga1–xMnxSb: crystal structure.- Ga1–xMnxSb: conductivity, magnetoresistance, Hall resistivity.- Ga1–xMnxSb: Curie temperature, magnetic anisotropy.- GaP: phonon density of states.- Hg1–xMnxTe: energy gaps, effective masses.- Hg1–xMnxTe: ionization energies.- Hg1–xMnxTe: mobility, conductivity and Hall coefficient.- Hg1–xMnxTe: absorption, reflectivity.- HgS: point/space groups.- HgS: band structure, energy gaps.- HgS: energy gaps.- HgS: conductivity.- HgS: resistivity.- HgSe: band structure, electron density of states.- HgSe: transmittance.- HgTe: lattice parameters.- HgTe: point/space groups.- HgTe: band structure, density of states.- HgTe: conductivity, Hall coefficient.- HgTe: resisitivity, carrier mobility.- HgTe: Seebeck coefficient.- Hg1-xZnxTe: phonon frequencies.- Hg1-xZnxTe: reflectance.- In1–xMnxSb: crystal structure, lattice parameter.- In1–xMnxSb: spin polarization.- In1–xMnxSb: conductivity, Hall resistivity.- In1–xMnxSb: magnetic phases, Curie temperature, magnetic anisotropy.- InPxSb1–x: energy gaps.- InPxSb1–x: effective charges.- InPxSb1–x: phonon frequencies.- InPxSb1–x: dielectric constant.- InSb: interband transition energies.- InSb: spin orbit splittings.- InSb: Dresselhaus spin splitting parameter.- InSb: effective Landé g factors.- InSb: effective mass parameters.- InSb: energies at symmetry points.- InSb: band structure.- InSb: critical point energies.- InSb: spin transport data.- InSb: absorption coefficient, reflectivity.- InSb: Auger lifetime.- InSb: dielectric constant.- InSb: extinction coefficient, refractive index.- InSb: higher order optical susceptibilities.- MgyZn1–yTe1–xSex: energy gaps.- Zn1-xMgxTe: energy gaps, bowing parameter.- Zn1–xMgxSe: absorption.- ZnSe1–xOx: exciton energies, exciton binding energies.- ZnSxO1-x: energy gaps, bowing parameter.- ZnO: mean inner potential.- ZnO: dielectric constants.- ZnSe: phase transition, transition pressure.- ZnSe: spin-orbit splitting.- ZnSe: deformation potentials.- ZnSe: Compton profiles.- ZnSe: Compton scattering profiles.- ZnSe: bound exciton data.- ZnSe: bound excitons and electrons.- ZnSe: bound excitons.- ZnSe: deep impurities.- ZnSe: deep impurities, muonium data.- ZnSe: diffusion coefficient.- ZnSe: donor acceptor pairs.- ZnSe: donor-acceptor pairs, free-to-bound transitions.- ZnSe: ionization and excitation energies.- ZnSe: ionization and excitation energies.- ZnSe: Hall mobility.- ZnSe: conductivity.- ZnSe: dielectric constants.- ZnSxSe1-x: energy gaps, bowing parameter.- ZnSxSe1-x: refractive index, dielectric constants.- ZnS1-xTex: bound excitons.- ZnS: phase transition, transition pressure.- ZnS: spin-orbit splitting.- ZnS: deep impurities, muonium data.- ZnS: ionization energies.- ZnS: resistivity.- ZnS: dielectric constants.- ZnS: dielectric constants.- ZnS: dielectric constants.- ZnTe: spin-orbit splitting.- ZnTe: bound excitons.- ZnTe: donor-acceptor-pairs.- ZnTe: ionization energies.- ZnTe: ionization energies.- ZnTe: diffusion coefficient.- ZnTe: resistivity.- ZnTe: thermoelectric power.- ZnTe: refractive index, dielectric constants.
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