Operation and Modeling of the MOS Transistor

Tsividis, Yannis

ISBN 10: 0195170148 / ISBN 13: 9780195170146

Editore: Oxford University Press, 2003

Open Books is a nonprofit social venture that provides literacy experiences for thousands of readers each year through inspiring programs and creative capitalization of books. Codice articolo mon0000786432

Riassunto:

Extensively revised and updated, this, the second edition of the highly praised textOperation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips.

KEY FEATURES


·Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise.


·Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications.


·New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them.


·Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided.

Product Description: Book by Tsividis Yannis

Dati bibliografici

Titolo: Operation and Modeling of the MOS Transistor
Casa editrice: Oxford University Press
Data di pubblicazione: 2003
Legatura: hardcover
Condizione: Very Good
Edizione: seconda edizione