Optoelectronic Properties of Gaussian DQWell for RTD Application

Arpan Deyasi (u. a.)

ISBN 10: 3659979376 / ISBN 13: 9783659979378

Editore: LAP LAMBERT Academic Publishing, 2016

Optoelectronic Properties of Gaussian DQWell for RTD Application | Arpan Deyasi (u. a.) | Taschenbuch | 204 S. | Englisch | 2016 | LAP LAMBERT Academic Publishing | EAN 9783659979378 | Verantwortliche Person für die EU: preigu GmbH & Co. KG, Lengericher Landstr. 19, 49078 Osnabrück, mail[at]preigu[dot]de | Anbieter: preigu. Codice articolo 107808248

Riassunto:

In this work, electronic and optoelectronic properties of Gaussian double quantum well is numerically computed in presence of electric field applied along the direction of quantum confinement. Structural parameters and material composition are tuned in order to study the variation of eigenenergies of lowest three levels and density of states. Tailorable carrier states and controllable intersubband transition are the features that can be utilized for design of photodetector. Absorption coefficient and oscillator strength are also calculated for the same purpose. Results are compared with ideal parabolic potential profile. Kane type band nonparabolicity of first order is considered for realistic simulation. Obtained results have profound importance for design of quantum well based optoelectronic devices.

Dati bibliografici

Titolo: Optoelectronic Properties of Gaussian DQWell...
Casa editrice: LAP LAMBERT Academic Publishing
Data di pubblicazione: 2016
Legatura: Taschenbuch
Condizione: Neu