Performance prediction of a future SiGe HBT technology using a heterogeneous set of simulation tools and approaches : Dissertation

Lingua: inglese

Editore: Bod - Books On Demand, Bod - Books On Demand, 2017

3743134268 / 9783743134263

Da: AHA-BUCH GmbH, Einbeck, GermaniaAHA-BUCH GmbH

Venditore con 5 stelle

Venditore AbeBooks dal 14 agosto 2006

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nach der Bestellung gedruckt Neuware - Printed after ordering - Bipolar complementary metal-oxide-semiconductor (BiCMOS) processes can be considered as the most general solution for RF products, as they combine the mature manufacturing tools of CMOS with the speed and drive capabilities of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). HBTs in turn are major contenders for partially filling the terahertz gap, which describes the range in which the frequencies generated by transistors and lasers do not overlap (approximately 0.3 THz to 30 THz). To evaluate the capabilities of such future devices, a reliable prediction methodology is desirable. Using a heterogeneous set of simulation tools and approaches allows to achieve this goal successively and is beneficial for troubleshooting. Various scientific fields are combined, such as technology computer-aided design (TCAD), compact modeling and parameter extraction.To create a foundation for the simulation environment and to ensure reproducibility, the used material models of the hydrodynamic and drift-diffusion approaches are introduced in the beginning of this thesis. The physical models are mainly based on literature data of Monte Carlo (MC) or deterministic simulations of the Boltzmann transport equation (BTE). However, the TCAD deck must be calibrated on measurement data too for a reliable performance prediction of HBTs. The corresponding calibration approach is based on measurements of an advanced SiGe HBT technology for which a technology-specific parameter set of the HICUM/L2 compact model is extracted for the high-speed, medium-voltage and high-voltage transistor versions. With the help of the results, one-dimensional transistor characteristics are generated that serve as reference for the doping profile and model calibration. By performing elaborate comparisons between measurement-based reference data and simulations, the thesis advances the state-of-the-art of TCAD-based predictions and proofs the feasibility of the approach.Finally, the performance of a future technology in 28 nm is predicted by applying the heterogeneous methodology. On the basis of the TCAD results, bottlenecks of the technology are identified.…

Codice articolo 9783743134263

Titolo
Performance prediction of a future SiGe HBT technology using a heterogeneous set of simulation tools and approaches : Dissertation
Autore
Tommy Rosenbaum
Editore
Bod - Books On Demand, Bod - Books On Demand
Anno di pubblicazione
2017
Condizione
Neu
Rilegatura
Taschenbuch
Lingua
inglese
ISBN 10
3743134268
ISBN 13
9783743134263
Peso dell'articolo
387 grammi
Dimensioni
210x148x17 mm

AHA-BUCH GmbH

Einbeck, Germania

Venditore con 5 stelle

Venditore AbeBooks dal 14 agosto 2006

Tariffe di spedizione da Germania a U.S.A.

ArticoloDa 30 a 40 giorni lavorativiDa 7 a 14 giorni lavorativi
Primo articoloEUR 61,94EUR 71,94
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