Performance prediction of a future SiGe HBT technology using a heterogeneous set of simulation tools and approaches

Lingua: inglese

Editore: Books On Demand Mrz 2017, 2017

3743134268 / 9783743134263

Da: BuchWeltWeit Ludwig Meier e.K., Bergisch Gladbach, GermaniaBuchWeltWeit Ludwig Meier e.K.

Venditore con 5 stelle

Venditore AbeBooks dal 11 gennaio 2012

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This item is printed on demand - it takes 3-4 days longer - Neuware -Bipolar complementary metal-oxide-semiconductor (BiCMOS) processes can be considered as the most general solution for RF products, as they combine the mature manufacturing tools of CMOS with the speed and drive capabilities of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). HBTs in turn are major contenders for partially filling the terahertz gap, which describes the range in which the frequencies generated by transistors and lasers do not overlap (approximately 0.3 THz to 30 THz). To evaluate the capabilities of such future devices, a reliable prediction methodology is desirable. Using a heterogeneous set of simulation tools and approaches allows to achieve this goal successively and is beneficial for troubleshooting. Various scientific fields are combined, such as technology computer-aided design (TCAD), compact modeling and parameter extraction.To create a foundation for the simulation environment and to ensure reproducibility, the used material models of the hydrodynamic and drift-diffusion approaches are introduced in the beginning of this thesis. The physical models are mainly based on literature data of Monte Carlo (MC) or deterministic simulations of the Boltzmann transport equation (BTE). However, the TCAD deck must be calibrated on measurement data too for a reliable performance prediction of HBTs. The corresponding calibration approach is based on measurements of an advanced SiGe HBT technology for which a technology-specific parameter set of the HICUM/L2 compact model is extracted for the high-speed, medium-voltage and high-voltage transistor versions. With the help of the results, one-dimensional transistor characteristics are generated that serve as reference for the doping profile and model calibration. By performing elaborate comparisons between measurement-based reference data and simulations, the thesis advances the state-of-the-art of TCAD-based predictions and proofs the feasibility of the approach.Finally, the performance of a future technology in 28 nm is predicted by applying the heterogeneous methodology. On the basis of the TCAD results, bottlenecks of the technology are identified. 264 pp. Englisch.…

Codice articolo 9783743134263

Titolo
Performance prediction of a future SiGe HBT technology using a heterogeneous set of simulation tools and approaches
Autore
Tommy Rosenbaum
Editore
Books On Demand Mrz 2017
Anno di pubblicazione
2017
Condizione
Neu
Rilegatura
Taschenbuch
Lingua
inglese
ISBN 10
3743134268
ISBN 13
9783743134263
Peso dell'articolo
387 grammi
Dimensioni
210x148x17 mm

BuchWeltWeit Ludwig Meier e.K.

Bergisch Gladbach, Germania

Venditore con 5 stelle

Venditore AbeBooks dal 11 gennaio 2012

Tariffe di spedizione da Germania a U.S.A.

ArticoloDa 5 a 15 giorni lavorativiDa 5 a 15 giorni lavorativi
Primo articoloEUR 23,00EUR 23,00
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BuchWeltWeit Ludwig Meier e.K.

Germania