Physics of Ferroelectrics

Karin M. Rabe

ISBN 10: 3642070965 / ISBN 13: 9783642070969

Editore: Springer Berlin Heidelberg Nov 2010, 2010

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This item is printed on demand - it takes 3-4 days longer - Neuware -During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory. 404 pp. Englisch.

Codice articolo 9783642070969

Dati bibliografici

• Titolo: Physics of Ferroelectrics
• Editore: Springer Berlin Heidelberg Nov 2010
• Data di pubblicazione: 2010
• Lingua: Inglese
• ISBN 10: 3642070965
• ISBN 13: 9783642070969
• Rilegatura: Taschenbuch
• Condizione: Neu
• Dimensioni: 235 L x 155 A x 22 P (millimetri) 235 millimetri di larghezza per 155 millimetri di altezza per 22 millimetri di profondità
• Peso: 610 grammi

Descrizione articolo

Riassunto

Revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. This book is a concise, thorough review of the most important breakthroughs of the past two decades. The book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory.

Dalla quarta di copertina

During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods of single crystalline ferroelectric thin films and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory. A book for practicing scientists as well as graduate students.