Physics of Ferroelectrics

Rabe, Karin M.|Ahn, Charles H.|Triscone, Jean-Marc

ISBN 10: 3540345906 / ISBN 13: 9783540345909

Editore: Springer Berlin Heidelberg, 2007

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Dieser Artikel ist ein Print on Demand Artikel und wird nach Ihrer Bestellung fuer Sie gedruckt. Concise, thorough review of the most important breakthroughs of the past two decades Up-to-date references Written by leading expertsThe past two decades have witnessed revolutionary breakthroughs in the understanding of ferroel.

Codice articolo 4888137

Dati bibliografici

• Titolo: Physics of Ferroelectrics
• Editore: Springer Berlin Heidelberg
• Data di pubblicazione: 2007
• Lingua: Inglese
• ISBN 10: 3540345906
• ISBN 13: 9783540345909
• Rilegatura: Gebunden
• Condizione: New
• Cataloghi dei venditori:
  • Mathematik/Naturwissenschaften/Technik/Medizin

Descrizione articolo

Riassunto

During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory.

Dalla quarta di copertina

During the past two decades, revolutionary breakthroughs have occurred in the understanding of ferroelectric materials, both from the perspective of theory and experiment. First principles approaches, including the Berry phase formulation of ferroelectricity, now allow accurate, quantitative predictions of material properties, and single crystalline thin films are now available for fundamental studies of these materials. In addition, the need for high dielectric constant insulators and nonvolatile memories in semiconductor applications has motivated a renaissance in the investigation of these materials. This book addresses the paradigmatic shifts in understanding brought about by these breakthroughs, including the consideration of novel fabrication methods of single crystalline ferroelectric thin films and nanoscale applications of these materials, and new theoretical methods such as the effective Hamiltonian approach and density functional theory. A book for practicing scientists as well as graduate students.